Abstract:Silicon carbon nitride (SiCN) films were deposited by dual ion beam sputtering (DIBS) of SiC target in mixed Ar/N2 atmosphere at 100°C. The surface roughness and the mechanical properties of the SiCN films were measured by using non-contact surface profilometer and nano-indenter. The bonding structure for the SiCN films was analyzed using Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), respectively. The influences of assisting ion beam energy and concentration on surface roughness, mechanical properties and bonding structure of the SiCN films were discussed systematically. The results showed that the variations of surface roughness and hardness for the SiCN films with the assisting ion beam energy were in the range of 7–27nm and 23–29GPa, respectively. With an increase in the nitrogen ion beam concentration, the film surface roughness first decreased to a minimum value, and then increased, while the hardness first increased to a peak value, and then decreased. When the assisting ion beam energy and concentration were 300eV and 0.5, the SiCN film possessed the low surface roughness of 11nm and the highest hardness of 29GPa, its atoms ratio, C:Si:N:O was about 1:0.42:0.18:0.32. The bonding structure of the SiCN films mainly consisted of Si–C, Si–N, C–N, CN and CC bonds and corresponded to a network of the mixed sp2/sp3 hybridized bonds with the units of Si(C4), Si(N4) and Si(C4−nNn). The film mechanical properties were correlated to the proportion of Si–C, Si–N, CN and C–N bonds in the SiCN films.

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Formation of Silicon Carbon Nitride Crystals and Aligned Silicon Carbon Nitride Microrods by Microwave Plasma Chemical Vapor Deposition

Effect of the deposition conditions on the morphology and bonding structure of SiCN films

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Synthesis of Nanocrystalline Carbon Nitride Films by Glow Discharge Plasma Beam Deposition

The Formation of SiCN Film on Si Substrate by Constant-Source Diffusion

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Spectra Characterization of Silicon Carbonitride Thin Films by Reactive Radio Frequency Sputtering

Characterization of silicon nitride films prepared by MW-ECR magnetron sputtering

C3N4 Film Deposited by Synchrotron Radiation Assisted CVD

Crystalline Carbon Nitride Films Prepared by Microwave Plasma Chemical Vapour Deposition

Deposition of crystalline C3N4 films via microwave plasma chemical vapour deposition

Crystalline Β-C3n4 Synthesized by MPCVD

Surface Roughness, Mechanical Properties and Bonding Structure of Silicon Carbon Nitride Films Grown by Dual Ion Beam Sputtering

Structures and bonding properties of carbon nitride films prepared by radio frequency magnetron sputtering

Synthesis of Crystalline Carbon Nitride by Microwave Plasma Chemical Vapor Deposition

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

Elective Deposition of Diamond Films on Si (100) Substrates

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

Synthesis of Crystalline C3N4 by MPCVD

Preparation and Analysis of Si3N4 Film