Abstract:Carbon nitride films were deposited on Co/Ni-covered Si(100) wafers at room temperature using a dc glow discharge plasma beam deposition method. The glow discharge has been carried out in a mixed gas of nitrogen and methane in different relative proportions and has maintained stable in an glow operating pressure around 30Torr. Scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectroscopy were carried out to investigate morphology, composition, structure and crystallinity of the as-deposited films. In scanning electron microscopy images, the as-deposited films consist of crystallites with an average size of about 20–30nm, and an interesting cauliflower structure is found in the center of a prepared sample. The X-ray diffraction results indicate that β- and graphitic-C3N4 crystallites and CNx or carbon nanotubes exist in the as-deposited films. The X-ray photoelectron spectroscopy results show that the [N]/[C] ratios are 0.34–0.46 and the peak shapes and intensities in the N 1s and C 1s regions are similar to those previously reported by our research group using the atom-beam assisted pulsed laser deposition method. The Raman spectra show two separated characteristic bands: a disordered D band (around 1323cm−1) that indicates the presence of C3N4 components, and a graphitic G band (around 1593cm−1). The impacts of the substrate temperatures, nitrogen/methane pressure ratios and Co/Ni layer thicknesses on the properties of the as-deposited films are discussed.

Formation of Silicon Carbon Nitride Crystals and Aligned Silicon Carbon Nitride Microrods by Microwave Plasma Chemical Vapor Deposition

Deposition of Silicon Carbon Nitride Film on Si (100) Substrates

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Crystalline Carbon Nitride Films Grown By Microwave Plasma Chemical Vapor Deposition

Effect of the deposition conditions on the morphology and bonding structure of SiCN films

Crystalline Carbon Nitride Films Prepared by Microwave Plasma Chemical Vapour Deposition

Synthesis of Crystalline Carbon Nitride by Microwave Plasma Chemical Vapor Deposition

Deposition of crystalline C3N4 films via microwave plasma chemical vapour deposition

Crystalline Β-C3n4 Synthesized by MPCVD

Synthesis of Crystalline C3N4 by MPCVD

Silicon Carbon Nitride Cones Prepared from an Ellipsoid Microwave Plasma Chemical Vapor Deposition Reactor

Preparation of Crystalline Carbon Nitride Films on Silicon Substrate by Chemical Vapor Deposition

Formation of Sic Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemical Vapor Deposition

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Synthesis and Characterization of Well-Aligned Carbon Nitrogen Nanotubes by Microwave Plasma Chemical Vapor Deposition

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

Synthesis of Nanocrystalline Carbon Nitride Films by Glow Discharge Plasma Beam Deposition

Structures and bonding properties of carbon nitride films prepared by radio frequency magnetron sputtering

Characterization of silicon nitride films prepared by MW-ECR magnetron sputtering

Structure Transition Mechanism Of Single-Crystalline Silicon, G-C3n4, And Diamond Nanocone Arrays Synthesized By Plasma Sputtering Reaction Deposition

Synthesis of nanostructured SiC films by plasma enhanced chemical vapor deposition with hydrogen diluted hexalmethyldisiloxane as precursor