Crystalline Carbon Nitride Films Grown By Microwave Plasma Chemical Vapor Deposition
Wt Zheng,X Wang,T Ding,Xt Li,Wd Fei,Y Sakamoto,K Kajinuma,H Watanabe,M Takaya
DOI: https://doi.org/10.1142/S0217979202010919
2002-01-01
International Journal of Modern Physics B
Abstract:The carbon nitride Films were deposited on single crystalline Si(001) and polycrystalline diamond substrates using microwave plasma chemical vapor deposition (MPCVD) with CH4+N-2, as well as CH4+NH3 mixtures as the reactive gas source, respectively, Different CH4/N-2 and CH4/NH3 gas ratios were tested. The results showed that carbon nitride films with different nitrogen content could more readily be obtained using a mixture of CH4/N-2 rather than CH4/NH3. The Films grown by different CH4/N-2 ratios showed different morphology, which was revealed by scanning electron microscopy (SEM). The crystalline carbon nitride films containing silicon were realized using a CH4:N-2=1:100 ratio, X-ray photoelectron spectroscopy (XPS), Auger electron microscopy (AES), Raman spectroscopy, and X-ray diffraction were used to characterize the composition and chemical bonding of the deposited films.