Formation of Cubic C3N4 Thin Films by Plasma Enhanced Chemical Vapor Deposition

ZH Zhang,HX Guo,GR Zhong,FW Yu,QH Xiong,XJ Fan
DOI: https://doi.org/10.1016/s0040-6090(98)01457-6
IF: 2.1
1999-01-01
Thin Solid Films
Abstract:Carbon nitride thin films were fabricated by plasma enhanced chemical vapor deposition (PECVD) using an Si3N4 interlayer. X-ray photoelectron spectroscopy (XPS) and transmission electron spectroscopy (TEM) were used to characterize the thin films. The nitrogen content of the thin films is up to 42.96 at.%, and Cls and N1s binding energies are 285.01, 398.60 eV respectively, as determined by XPS. The results of TEM suggest that the cubic C3N4 grains with typical dimensions of 0.4–2 μm are embedded in an amorphous C-N polymer. The cubic C3N4 has bcc structure with a lattice parameter of 0.536 nm. The thin films deposited on glass have strong absorption at 400 nm.
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