Abstract:The preparation of high-quality graphite-like phase carbon nitride (g-C3N4) films is challenging, which limits the potential optoelectronic and photocatalytic applications. Here, we report the growth of crystalline g-C3N4 films with thicknesses of approximately 100–200 nm on the indium tin oxide substrates by chemical vapor deposition. The films show high crystalline quality and uniformity as suggested by the appearance of interference fringes in the transmission spectra and the existence of exciton peak. The optimized growth conditions for high-quality g-C3N4 films deposition have been obtained through combined optical characterizations and detailed electronic structure analyses using x-ray spectroscopies. The as-grown g-C3N4 films exhibit a bandgap value of 3.05 eV as well as an enhanced fluorescence lifetime of ∼12.43 ns. By adding thiourea to the melamine precursors, N vacancies have been formed in the main heptazine structure, achieving the modulation of the bandgap and the promoted carrier separation. This work provides guidelines for understanding the property–structure relationships during g-C3N4 film deposition. The deposition of high crystallinity g-C3N4 films therein further extends the applications in the fields of optoelectronic and photocatalytic devices.

PREPARATION OF CUBIC C 3 N 4 THIN FILMS BY LOW-PRESSURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Formation of Cubic C3N4 Thin Films by Plasma Enhanced Chemical Vapor Deposition

Synthesis and Characterization of C 3 N 4 Hard Films

Synthesis and characterization of C3N4 crystalline films on silicon

Deposition of crystalline C3N4 films via microwave plasma chemical vapour deposition

C3N4 Film Deposited by Synchrotron Radiation Assisted CVD

Synthesis of Crystalline C3N4 by MPCVD

Crystalline Carbon Nitride Films Prepared by Microwave Plasma Chemical Vapour Deposition

Crystalline Β-C3n4 Synthesized by MPCVD

Synthesis of C3N4+ by the Combination of Laser Ablation of Graphite and N2 Molecular Beam

High-Temperature High-Pressure Synchrotron X-Ray Diffraction Study Of C3n4

Preparation of Crystalline Carbon Nitride Films on Silicon Substrate by Chemical Vapor Deposition

Preparation and Analysis of Si3N4 Film

Bandgap modulations and promoted carrier separation in crystalline g-C3N4 thin films via chemical vapor deposition

Formation of Β-C3n4 Phase in C-N Films Deposited by Reactive Ionized Cluster Beam Method

Synthesis of high quality crystalline C-N films on silicon

Investigation of carbon nitride films by cathodic arc evaporation

Optical & Electronic Properties of Carbon Nitride Thin Films

Deposition Of Nanocrystalline Cubic Silicon Carbide Films Using The Hot-Filament Chemical-Vapor-Deposition Method

Carbon Nitride Films Synthesized By Nh3-Ion-Beam-Assisted Deposition

Preliminary Synthesis of Carbon Nitride Thin Films by N$_2$/CH$_4$ Microwave Plasma Assisted Chemical Vapour Deposition: Characterisation of the Discharge and the Obtained Films