Chemical control of physical properties in silicon nitride films
Xiangdong Xu,Dong Zhou,Qiong He,Yadong Jiang,Taijun Fan,Long Huang,Tianhong Ao,Shaowei He
DOI: https://doi.org/10.1007/s00339-012-7301-z
2012-01-01
Applied Physics A
Abstract:Amorphous hydrogenated silicon nitride ( a -SiN x H y ) films were prepared by plasma-enhanced chemical vapor deposition (PECVD). The physical properties and chemical structures of the resulting materials were systematically investigated. Results reveal that the a -SiN x H y films similarly consist of four kinds of Si–N groups, including Si 3 N 4 , H–Si–N 3 , H 2 –Si–N 2 , and Si 3 –Si–N. Deposition at 13.56 MHz and 300 ∘ C with flow ratio of SiH 4 /NH 3 =30/30 sccm leads to the yield of Si 0.39 N 0.38 H 0.23 films that exhibit excellent properties of high uniformity, high elastic modulus, moderate refractive index and optical band gap, low UV absorption, and ultralow residual stress (−0.17 MPa). Such Si 0.39 N 0.38 H 0.23 films hold considerable promise for applications in solar cells and infrared sensors. In contrast, an increase of Si or N content in a -SiN x H y films will cause the degradation of the properties, so that the films are unsuitable for solar cells. Moreover, a new conception of network degree was proposed to evaluate and explain the properties of a -SiN x H y films. Particularly, this work discloses the relationships between the chemical structures and physical properties, and suggests a basic approach to the yield of a -SiN x H y films with controlled physical properties.