STUDY OF DEPOSITION CHARACTER OF SILICON OXYNITRIDE THIN FILMS PREPARED BY ATMOSPHERIC PRESSURE CVD

丁新更,杨辉,孟祥森

DOI: https://doi.org/10.3321/j.issn:0454-5648.2003.11.013

2003-01-01

Abstract:Silicon oxynitride thin films were prepared by atmospheric pressure Chemical vapor deposition. The factors controlling deposition rate and formation mode were studied. The results indicate that as the substrate temperature being 650℃ , p(NH3) : (?)(SiH4) ratio being 20, when the flow rate of the mixed gas is lower than and higher than 720 ml/min, the major factor controlling film formation is the gas diffusion process and surface gas reaction, respectively; when the flow rate of the mixed gas equaled to 720 ml/min, the surface reaction was mainly controlled by substrate surface reaction, the film thickness is linearly correlated to deposition time, the deposition rate is 1640 nm/min, and the surface-active energy is 283 kJ/mol. SEM analysis reveals that the formation of Si - O - N films is three-dimension nucleation. The nucleation process is composed of three stages. At the beginning, the Si, N and O atoms congregate into atom clusters, and subsequently, some clusters form critical cores. Secondly, the cores grow to be islands, and the islands extend to form tunnels and networks. Finally, more atoms fill in the holes on the networks to form continuous films.