Abstract:Atmospheric pressure plasma jet (APPJ) is a promising method for thin film deposition. In this work, an argon/oxygen/hexamethyldisiloxane APPJ is utilized to deposit SiO 2 -like thin film on a stainless steel surface, and then the optical, electrical, thermal, and particle properties of this APPJ are investigated by adjusting the applied voltage. Moreover, the surface morphology, thickness, roughness, element composition, and water contact angle properties of the deposited thin films are also studied. The results show that there are two filaments discharge states of the APPJ by increasing voltage, which are partial filaments discharge (PFD) state at 5.4 kV and uniform filaments discharge (UFD) state at 7.5 kV. The current pulses and plasma gas temperature in the UFD state are higher than in the PFD state. The dissipated power increases from 7.2 to 19.1 W with the applied voltage increases. And OH, O, and Si active particles are monitored in two discharge states of APPJ. Besides, the surface morphology of the deposited thin films is different in the two discharge states and the film thickness is 1.21 ± 0.19 μm and 1.55 ± 0.35 μm respectively. The XPS results show that the film is a SiO 2 -like film in which the Si/O ratio is 2.80 and 2.76 and contains three kinds of Si–O bonds and a high concentration of carbon (47% and 53%). Finally, the SiO 2 -like films deposited on the surface of stainless steel at two discharge states are hydrophobic and the water contact angles are 76.8° ± 5° and 90.3° ± 3° respectively. This work is helpful in the deposition of high-quality silicon-containing films on conductive substrates by APPJ.

Effect of the Monomer TEOS Flow Rate on the Formation of Silicon Dioxide Films by Nonequilibrium,atmospheric Pressure Plasma Jet

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Properties of amorphous SiO2 films prepared by reactive RF magnetron sputtering method

Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

Effect of Applied Voltage on Localized Deposition of Silicon Dioxide-like Films on Stainless Steel Using Atmospheric Pressure Microplasma Jet

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Monomers effect on the gas and humid barrier properties in PECVD deposited SiOx film on PET surface

Aerosol assisted low temperature plasma torch at atmospheric pressure for an efficient deposition of SiO2 thin films

Low-Temperature Atmospheric-Pressure Plasma-Enhanced Chemical Deposition of Silicon Dioxide Films from Tetraethoxysilane

The Power Source Effect on SiOx Coating Deposition by Plasma Enhanced Chemical Vapor Deposition

Deposition of Silicon Oxide Coatings by Atmospheric Pressure Plasma Jet for Oxygen Diffusion Barrier Applications

Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate

Effects of Ethylene doping on Deposition Rate and Surface Profile of Silicon Films

Low-energy N+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate, hexamethyldisiloxane, or hexamethyldigermane

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Silicon dioxide film deposited by photoassisted microwave plasma CVD using TEOS

Low‐temperature atmospheric pressure plasma conversion of polydimethylsiloxane and polysilazane precursor layers to oxide thin films

SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

Boundary layer chemistry probed by in situ infrared spectroscopy during SiO2 deposition at atmospheric pressure from tetraethylorthosilicate and ozone