Abstract:Oxide films of the quality required for the fabrication of electronic and photonic devices are typically deposited at elevated temperatures and thermal equilibrium, thereby adversely impacting thermal budgets. We report the deposition and patterning of silicon dioxide (SiO2) films of high electrical and optical quality on Si(100) or polymer substrates in a N2 atmosphere and at 300 K by the photochemical conversion of thin liquid tetraethoxysilane (TEOS) layers with narrowband vacuum ultraviolet radiation [vacuum ultraviolet (VUV), 172 nm] provided by efficient microplasma lamps. Irradiating liquid TEOS layers, produced by spin-coating the precursor onto a substrate, with a VUV intensity of 13 mW cm−2, yields 40 nm-thick SiO2 films having a dielectric breakdown strength (Eb) of 5 MV cm−1, for which no precedent exists in the deposition of oxide films at 300 K. If room temperature-deposited films are post-annealed at 200 °C, Eb rises to 7.5 MV cm−1, which is <12% below the measured value (8.5 MV cm−1) for 40 nm SiO2 films grown by thermal oxidation. The deposition of 1 μm thick, stoichiometric SiO2 films requires only 20 min of VUV illumination at low optical fluences, and films with thicknesses of ∼35–60 nm exhibit a refractive index of 1.45 (633 nm). X-ray photoelectron spectrometry and Rutherford backscattering analysis indicate that, despite the deposition temperature, hydrocarbon impurity levels are near or below the detection limit. The capability for depositing 960 nm-thick SiO2 films uniformly (to within 0.6%) by liquid → solid photochemical conversion over a 5 cm diameter Si substrate and patterning films onto flexible polymer substrates has also been demonstrated.

Aerosol assisted low temperature plasma torch at atmospheric pressure for an efficient deposition of SiO2 thin films

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Preparation Of Low-K Nanoporous Sio2 Films By Plasma-Enhanced Chemical Vapor Deposition

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Effect of the Monomer TEOS Flow Rate on the Formation of Silicon Dioxide Films by Nonequilibrium,atmospheric Pressure Plasma Jet

SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

Pulsed Aerosol-Assisted Low-Pressure Plasma for Thin-Film Deposition

Low-Temperature Atmospheric-Pressure Plasma-Enhanced Chemical Deposition of Silicon Dioxide Films from Tetraethoxysilane

Effect of Applied Voltage on Localized Deposition of Silicon Dioxide-like Films on Stainless Steel Using Atmospheric Pressure Microplasma Jet

Deposition of SiOx films with a capacitively-coupled plasma at atmospheric pressure

Deposition of Thin Films From HMDSO Utilizing the Vacuum UV Radiation From an Atmospheric Plasma

Post-Plasma SiOx Coatings of Metal and Metal Oxide Nanoparticles for Enhanced Thermal Stability and Tunable Photoactivity Applications

Growth Of Ultrathin Sio2 On Si By Surface Irradiation With An O-2+Ar Electron Cyclotron Resonance Microwave Plasma At Low Temperatures

Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

Low‐temperature atmospheric pressure plasma conversion of polydimethylsiloxane and polysilazane precursor layers to oxide thin films

Diamond-Like Carbon Thin-Film Deposition Using A Magnetically Confined Rf Pecvd System

Formation of SiO2 Thin Films Through Plasma- Enhanced Chemical Vapor Deposition Using SiH4/Ar/N2O

Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K

Preparation Of Sio2 Thin Films On High Speed Steel Substrates By Rf Reactive Magnetron Sputtering

Direct Liquid Reactor-Injector of Nanoparticles: A Safer-by-Design Aerosol Injection for Nanocomposite Thin-Film Deposition Adapted to Various Plasma-Assisted Processes