Abstract:A simple procedure has been developed for the processing of silicon wafers in order to facilitate the spatially resolved growth of thin solid films on their surfaces. Specifically, a combination of silylation and UV/ozonolysis was tested as a way to control the concentration of the surface hydroxo groups required for subsequent atomic layer deposition (ALD) of metals or oxides. Water contact angle measurements were used to evaluate the hydrophilicity/hydrophobicity of the surface, a proxy for OH surface coverage, and to optimize the UV/ozonolysis treatment. Silylation with hexamethyldisilazane, trichloro(octadecyl)silane, or trimethylchlorosilane was found to be an efficient way to block the hydroxo sites and to passivate the underlying surface, and UV/O3 treatments were shown to effectively remove the silylation layer and to regain the surface reactivity. Both O3 and 185 nm UV radiation were determined necessary for the removal of the silylation layer, and additional 254 nm radiation was found to enhance the process. Attenuated total reflection-infrared absorption spectroscopy was employed to assess the success of the silylation and UV/O3 removal steps, and atomic force microscopy data provided evidence for the retention of the original smoothness of the surface. Selective growth of HfO2 films via TDMAHf + H2O ALD was seen only on the UV/O3 treated surfaces; total inhibition of the deposition was observed on the untreated silylated surfaces (as determined by x-ray photoelectron spectroscopy and ellipsometry). Residual film growth was still detected on the latter if the ALD was carried out at high temperatures (250 °C), because the silylation layer deteriorates under such harsh conditions and forms surface defects that act as nucleation sites for the growth of oxide grains (as identified by electron microscopy and scanning electron microscopy). We believe that the silylation-UV/O3 procedure advanced here could be easily implemented for the patterning of surfaces in many microelectronic applications.

Deposition of Thin Films From HMDSO Utilizing the Vacuum UV Radiation From an Atmospheric Plasma

Ion chemistry and ionic thin film deposition from HMDS‐photochemistry induced by VUV‐radiation from an atmospheric plasma

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Aerosol assisted low temperature plasma torch at atmospheric pressure for an efficient deposition of SiO2 thin films

Low-energy N+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate, hexamethyldisiloxane, or hexamethyldigermane

In-situ diagnosis during preparation of SiO_x thin films by mass spectroscopy and their characteristics

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Low-energy O+ or SiO+ ion beam induced deposition of silicon oxide using hexamethyldisiloxane

Diamond-Like Carbon Thin-Film Deposition Using A Magnetically Confined Rf Pecvd System

Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

Effect of the Monomer TEOS Flow Rate on the Formation of Silicon Dioxide Films by Nonequilibrium,atmospheric Pressure Plasma Jet

SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

The Power Source Effect on SiOx Coating Deposition by Plasma Enhanced Chemical Vapor Deposition

Pulsed Aerosol-Assisted Low-Pressure Plasma for Thin-Film Deposition

Construction and evaluation of an ultrahigh-vacuum-compatible sputter deposition source

Post-Plasma SiOx Coatings of Metal and Metal Oxide Nanoparticles for Enhanced Thermal Stability and Tunable Photoactivity Applications

Spatial resolution in thin film deposition on silicon surfaces by combining silylation and UV/ozonolysis

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

Low‐temperature atmospheric pressure plasma conversion of polydimethylsiloxane and polysilazane precursor layers to oxide thin films

Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma