Abstract:For plastic electronics and optics, the fabrication of smooth, transparent and stable crack-free inorganic oxide films (and patterning) on flexible polymeric substrates with strong bonding strength and controllable thickness from nanometers to micrometers is a key but still remains a challenge. Among versatile inorganic oxides, silica oxide film as SiO x is especially important because this semiconductor material could provide crucial properties in devices or serve as a base layer for further multilayer construction. In this paper, we describe a new interface-directed sol-gel method to fabricate flexible high quality silicon oxide film onto commodity plastics. The resulting crack-free silica film has strong covalent bonding with polymer substrates, homogeneous morphology with ultralow roughness, highly optical transparency, tunable thickness from nm to μm, and easy patterning ability. Such fabrication strategy relies on a novel photocatalytic oxidation reaction by photosensitive ammonium persulfate (APS), which is able to fabricate highly reactive hydroxyl monolayer surface on inert polymeric substrates. This kind of hydroxylated surface could serve as nucleation and growth sites to initiate surface sol-gel process. As a result, well-defined SiO x film deposition (gelation) occurs, and patterned hydroxylation regions could be easily utilized to induce the formation of patterned oxide film arrays. Our strategy also excludes the requirements of clean room and vacuum devices so as to fulfill low-cost and fast fabrication demands. Two application examples from such high quality SiO x layer onto plastics are given but should not be limited within these. One is that oxygen permeation rate of SiO x deposited polymer film decreases 25 times than pristine polymer substrate, which is good for the potential packaging materials. The other one is that silanization monolayer, for example, 3-aminopropyltriethoxysilane (APTES), could be successfully constructed onto silica layer through classical silanization reaction, which is applicable for many potential purposes, for instance, proteins could be accordingly immobilized onto plastic support with effective signal-to-background ratio. Moreover, we further demonstrate that this interface-directed sol-gel strategy is a general method which could be successfully extended to other high quality oxide film fabrication, e.g., TiO 2 .

Spatial resolution in thin film deposition on silicon surfaces by combining silylation and UV/ozonolysis

Alignment of Ferroelectric Liquid Crystal on Surface SiO2 Films on Oblique Ion Beam Deposition

Spatial Control over Atomic Layer Deposition Using Microcontact-Printed Resists

Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2.

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

Area Selective Atomic Layer Deposition by Soft Lithography

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

An Extremely Simple and Effective Strategy to Tailor the Surface Performance of Inorganic Substrates by Two New Photochemical Reactions

In Situ X-Ray Photoelectron Spectroscopy Analysis of the Atomic Layer Deposition of Al2O3 on SiO X /si: Interface Dipole and Persistent Surface Groups

Preparation of Hydrophobic/Superhydrophobic Surface on Silicon Wafer by Reactive Ion Etching and Self-assembled Monolayers

Achieving Area-Selective Atomic Layer Deposition on Patterned Substrates by Selective Surface Modification

Area-Selective Atomic Layer Deposition Using Self-Assembled Monolayer and Scanning Probe Lithography

In situ x-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al 2 O 3 on SiO x /Si: Interface dipole and persistent surface groups.

Organosulfide Inhibitor Instigated Passivation of Multiple Substrates for Area-Selective Atomic Layer Deposition of HfO 2

Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K

Initial Surface Reactions in Atomic Layer Deposition of Hfsixoy and Hfo2: A Comparative Study by Density Functional Theory

Achieving Ultralow Surface Roughness and High Material Removal Rate in Fused Silica Via a Novel Acid SiO2 Slurry and Its Chemical-Mechanical Polishing Mechanism

Design, implementation, and characterization of an automated SILAR system: validation with ZnO thin film deposition

In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride

Interface-directed sol-gel: direct fabrication of the covalently attached ultraflat inorganic oxide pattern on functionalized plastics