Role of Precursor Choice on Area-Selective Atomic Layer Deposition
Il-Kwon Oh,Tania E. Sandoval,Tzu-Ling Liu,Nathaniel E. Richey,Stacey F. Bent
DOI: https://doi.org/10.1021/acs.chemmater.0c04718
IF: 10.508
2021-05-26
Chemistry of Materials
Abstract:Area-selective atomic layer deposition (AS-ALD) is a highly sought-after strategy for the fabrication of next-generation electronics. This work reveals how key precursor design parameters strongly influence the efficacy of AS-ALD by comparing a series of precursors possessing the same metal center but different ligands. When the number of methyl and chloride groups in Al(CH<sub>3</sub>)<sub><i>x</i></sub>Cl<sub>3–<i>x</i></sub> (<i>x</i> = 0, 2, and 3) and the chain length of alkyl ligands in AlC<sub><i>y</i></sub>H<sub>2<i>y</i>+1</sub> (<i>y</i> = 1 and 2) are changed, the effect of precursor chemistry (reactivity and molecular size) on the selectivity is elucidated. The results show that optimized parameters for the Al<sub>2</sub>O<sub>3</sub> ALD processes on a self-assembled monolayer (SAM)-terminated substrate, which serves as the nongrowth surface, differ significantly from those on a Si substrate. Chlorine-containing precursors need a much longer purging time on the SAMs because of a stronger Lewis acidity compared to that of alkyl precursors. With reoptimized conditions, the ALD of Al<sub>2</sub>O<sub>3</sub> using the Al(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub> precursor is blocked most effectively by SAM inhibitors, whereas the widely employed Al(CH<sub>3</sub>)<sub>3</sub> precursor is blocked least effectively among the precursors tested. Finally, we show that a selectivity exceeding 0.98 is achieved for up to 75 ALD cycles with Al(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub>, for which 6 nm of Al<sub>2</sub>O<sub>3</sub> film grows selectively on SiO<sub>2</sub>-covered Si. Quantum chemical calculations show significant differences in the energetics of dimer formation across the Al precursors, with only ∼1% of AlCl<sub>3</sub> and Al(CH<sub>3</sub>)<sub>2</sub>Cl precursors but 99% of the alkyl precursors, Al(CH<sub>3</sub>)<sub>3</sub> and Al(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub>, existing as monomers at 200 °C. We propose that a combination of precursor reactivity and effective molecular size affects the blocking of the different precursors, explaining why Al(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub>, with weaker Lewis acidity and relatively large size, exhibits the best blocking results.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.0c04718?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.0c04718</a>.WCA with increasing ALD cycle number (Figure S1); growth per cycle of Al<sub>2</sub>O<sub>3</sub> on Si as a function of precursor purging time (Figure S2); amount of Al/(Al + Si) and Al/(Al + Au) for AlCl<sub>3</sub> and Al(CH<sub>3</sub>)<sub>3</sub> on ODTS/Si and ODT/Au (Figure S3) (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c04718/suppl_file/cm0c04718_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical