Abstract:Thermal atomic layer etching is rapidly becoming an important complementary processing technology in the manufacturing of 5 and 3 nm devices in the semiconductor industry. Critically, architectures such as 3D NAND and 3D DRAM require conformal isotropic etching to remove material such as HfO 2 in hard-to-reach locations with aspect ratios that can be greater than 50:1. To achieve repeatable device performance throughout a 3D stack, the removal rate (etch per cycle) of the etched material during an etch process needs to be controlled such that the overall etch amount is the same from top to bottom of the device stack. In this work, the reaction kinetics of reactants and byproducts during a cyclical ligand exchange-based atomic layer etching (ALE) process have been modelled. This ALE process consists of two steps: a fluorination step followed by a fluorine-to-chlorine ligand exchange-based removal step. Modeling was performed for each of those steps separately. Experimental data revealed that the fluorine dosing during the fluorination step was predominantly responsible for controlling the etch rate of the ALE process but had only a minimal impact on the etch profile inside high aspect ratio holes. The ligand exchange dosing, on the other hand, predominantly controlled the etch profile (depth loading) with equal etch rates from top-to-bottom, obtained when the step was operated close to saturation. The model predicts that the chemical reaction rate of dimethylaluminum chloride (DMAC) on a fluorinated surface during the ligand exchange step is 9.1 s −1 , about 46 times greater than the reaction rate of hydrogen fluoride (HF) on the hafnium oxide surface during the fluorination step (only 0.2 s −1 ). Furthermore, modeling results revealed that the sticking coefficient for DMAC on a hafnium fluoride surface far exceeded that of HF on a hafnium oxide surface in the conditions modelled (0.94 s −1 for DMAC vs 0.0058 s −1 for HF). With these modeling results, the different roles fluorination and ligand exchange steps have regarding the control of etch rate per cycle and profile inside high aspect ratio holes can be explained.

Enhanced atomic layer etching of native aluminum oxide for ultraviolet optical applications

Ultrathin protective coatings by atomic layer engineering for far ultraviolet aluminum mirrors

Performance and prospects of far ultraviolet aluminum mirrors protected by atomic layer deposition

Atomic Layer Deposition and Its Applications in Optical Thin Films

In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride

Anti-reflection Coating at 550 Nm Fabricated by Atomic Layer Deposition

Optical Properties of Al 2 O 3 Thin Film Fabricated by Atomic Layer Deposition

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF$_6$ plasma and Al(CH$_3$)$_3$

Scaling Atomic Layer Deposition to Astronomical Optic Sizes: Low-Temperature Aluminum Oxide in a Meter-Sized Chamber

Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures

Chemical corrosion protection of optical components using atomic layer deposition.

Thermal Atomic Layer Etching: Mechanism, Materials and Prospects

The improvement of surface roughness for OAP aluminum mirrors: from terahertz to ultraviolet

A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films

Antireflection coatings for deep ultraviolet optics deposited by magnetron sputtering from Al targets.

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H$_2$ and SF$_6$ plasmas

Advanced Environmentally Resistant Lithium Fluoride Mirror Coatings for the Next-Generation of Broadband Space Observatories

Spatial resolution in thin film deposition on silicon surfaces by combining silylation and UV/ozonolysis

HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition