Abstract:Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) is considered a promising technique for high-throughput and low-temperature deposition of ultrathin films for applications where volume and costs are particularly relevant. The number of atmospheric-pressure PE-s-ALD processes developed so far is rather limited, and the fundamental aspects of their growth mechanisms are largely unexplored. This work presents a study of the atmospheric-pressure PE-s-ALD process of Al 2 O 3 using trimethylaluminum [TMA, Al(CH 3 ) 3 ] and Ar–O 2 plasma within the temperature range of 80–200 °C. Thin-film analysis revealed low impurity contents and a decreasing growth-per-cycle (GPC) with increasing temperature. The underlying chemistry of the process was studied with a combination of gas-phase infrared spectroscopy on the exhaust plasma gas and optical emission spectroscopy (OES) on the plasma zone. Among the chemical species formed in the plasma half-cycle, CO 2 , H 2 O, CH 4 , and CH 2 O were identified. The formation of these products confirms that the removal of CH 3 ligands during the plasma half-cycle occurs through two reaction pathways that have a different temperature dependences: (i) combustion reactions initiated by O 2 plasma species and leading to CO 2 and H 2 O formation and (ii) thermal ALD-like reactions initiated by the H 2 O molecules formed in pathway (i) and resulting in CH 4 production. With increasing temperature, the dehydroxylation of OH groups cause less TMA adsorption which leads to less CO 2 and H 2 O from the combustion reactions in the plasma step. At the same time, the higher reactivity of H 2 O at higher temperatures initiates more thermal ALD-like reactions, thus producing relatively more CH 4 . The CH 4 can also undergo further gas-phase reactions leading to the formation of CH 2 O as was theoretically predicted. Another observation is that O 3 , which is naturally produced in the atmospheric-pressure O 2 plasma, decomposes at higher temperatures mainly due to an increase of gas-phase collisions. In addition to the new insights into the growth mechanism of atmospheric-pressure PE-s-ALD of Al 2 O 3 , this work presents a method to study both the surface chemistry during spatial ALD to further extend our fundamental understanding of the method.

Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy

Plasma-Assisted ALD of Al2O3 at Low Temperatures: Reaction Mechanisms and Material Properties

In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3

Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy

Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor

Study of Mid-Pressure Ar Radiofrequency Plasma Used in Plasma-Enhanced Atomic Layer Deposition of α-Al2O3

Exploring TMA and H2O Flow Rate Effects on Al2O3 Thin Film Deposition by Thermal ALD: Insights from Zero-Dimensional Modeling

A Water‐free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films

Investigating the Trimethylaluminium/Water ALD Process on Mesoporous Silica by In Situ Gravimetric Monitoring

Suppressing substrate oxidation during plasma-enhanced atomic layer deposition on semiconductor surfaces

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

Advanced atmospheric-pressure spatial atomic layer deposition for OLED encapsulation: Controlling growth dynamics for superior film performance

Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition

Tailored Molybdenum Carbide Properties and Graphitic Nano Layer Formation by Plasma and Ion Energy Control during Plasma Enhanced ALD

(Invited) Surface Thermolysis of ALD Precursors and Its Implications for Deposition

A Mechanism for the Growth of a Plasma Electrolytic Oxide Coating on Al

Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoOx thin films

A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Characterizing the Stability of Ultra-Thin Metal Oxide Catalyst Films in Non-thermal Plasma CO2 Reduction Reactions

Innovative low temperature plasma approach for deposition of alumina films