Abstract:Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) is considered a promising technique for high-throughput and low-temperature deposition of ultrathin films for applications where volume and costs are particularly relevant. The number of atmospheric-pressure PE-s-ALD processes developed so far is rather limited, and the fundamental aspects of their growth mechanisms are largely unexplored. This work presents a study of the atmospheric-pressure PE-s-ALD process of Al 2 O 3 using trimethylaluminum [TMA, Al(CH 3 ) 3 ] and Ar–O 2 plasma within the temperature range of 80–200 °C. Thin-film analysis revealed low impurity contents and a decreasing growth-per-cycle (GPC) with increasing temperature. The underlying chemistry of the process was studied with a combination of gas-phase infrared spectroscopy on the exhaust plasma gas and optical emission spectroscopy (OES) on the plasma zone. Among the chemical species formed in the plasma half-cycle, CO 2 , H 2 O, CH 4 , and CH 2 O were identified. The formation of these products confirms that the removal of CH 3 ligands during the plasma half-cycle occurs through two reaction pathways that have a different temperature dependences: (i) combustion reactions initiated by O 2 plasma species and leading to CO 2 and H 2 O formation and (ii) thermal ALD-like reactions initiated by the H 2 O molecules formed in pathway (i) and resulting in CH 4 production. With increasing temperature, the dehydroxylation of OH groups cause less TMA adsorption which leads to less CO 2 and H 2 O from the combustion reactions in the plasma step. At the same time, the higher reactivity of H 2 O at higher temperatures initiates more thermal ALD-like reactions, thus producing relatively more CH 4 . The CH 4 can also undergo further gas-phase reactions leading to the formation of CH 2 O as was theoretically predicted. Another observation is that O 3 , which is naturally produced in the atmospheric-pressure O 2 plasma, decomposes at higher temperatures mainly due to an increase of gas-phase collisions. In addition to the new insights into the growth mechanism of atmospheric-pressure PE-s-ALD of Al 2 O 3 , this work presents a method to study both the surface chemistry during spatial ALD to further extend our fundamental understanding of the method.

Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor

Metal-organic Chemical Vapor Deposition of Aluminium Oxynitride from Propylamine–dimethylaluminium Hydride and Oxygen: Growth Mode Dependence and Performance Optimization

Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films

Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy

Optical Properties of Al 2 O 3 Thin Film Fabricated by Atomic Layer Deposition

A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films

H 2 O-based atomic layer deposition mechanism of aluminum oxide using trimethylaluminum

H2O-based Atomic Layer Deposition Mechanism of Aluminum Oxide Using Trimethylaluminum

Investigating the Trimethylaluminium/Water ALD Process on Mesoporous Silica by In Situ Gravimetric Monitoring

Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

A Water‐free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films

Unravelling the Selective Growth Mechanism of AlOx with Dimethylaluminum Isopropoxide As a Precursor in Atomic Layer Deposition: a Combined Theoretical and Experimental Study

Plasma-Assisted ALD of Al2O3 at Low Temperatures: Reaction Mechanisms and Material Properties

Effects of Al Precursors on the Characteristics of Indium-Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition

Exploring TMA and H2O Flow Rate Effects on Al2O3 Thin Film Deposition by Thermal ALD: Insights from Zero-Dimensional Modeling

Accurately computed dimerization fraction of ALD precursors and their impact on surface reactivity in area-selective atomic layer deposition

Experimental Study of Trimethyl Aluminum Decomposition

First-Principles Predictions and in Situ Experimental Validation of Alumina Atomic Layer Deposition on Metal Surfaces

In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3

A Mass Spectrometrical Surface Chemistry Study of Aluminum Nitride ALD from Tris-Dimethylamido Aluminum and Ammonia

A Comparison Between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium As the Aluminium Precursors