Abstract:Atomic layer deposition (ALD) is a highly important technology to fabricate nickel and nickel compound thin films. The quality of the ALD films relies much on the surface chemistry reactions involved in the ALD process. Aiming to achieve high-quality ALD films, a careful surface chemistry study is carried out in this work to investigate the surface thermolysis behavior of an amidinate-type nickel precursor, bis(N,N'-di-tert-butylacetamidinato)nickel(II) (Ni(amd)(2)). Using the in situ technique of X-ray photoelectron spectroscopy, this work reveals a number of implications which are important for the engineering of the ALD processes. The Ni(amd)(2) precursor is shown to be reactive to the SiOx surface even at room temperature, which suggests a good suitability for low-temperature ALD. The surface amidinate moiety is found to decompose at 250 degrees C, which suggests the limitation of Ni(amd)(2) for high-temperature ALD. On the other hand, the byproduct of the surface reaction, amidine, can be adsorbed on the surface at low temperature, which might be trapped in the deposited film, inducing carbon and nitrogen impurities. Therefore, if the goal is to achieve a low impurity, a relatively higher deposition temperature (e.g., at 150-200 degrees C) would be favored. To further demonstrate the important value of the above implications from the thermolysis study, an example of the ALD of NiO is investigated experimentally. Indeed, the NiO films can be successfully deposited at an ever-low temperature of 90 degrees C, and increasing the deposition temperature to 200 degrees C can eliminate the accumulation of carbon and nitrogen impurities at the film-substrate interface, whereas the deposition at 250 degrees C leads to drastic increase in impurities, likely owing to the thermal decomposition of the surface amidinate moiety. All these experimental findings are well consistent with the implications from the surface thermolysis study, which highlights the important value of this surface thermolysis approach for rational ALD process engineering. Given the similarity and broad use of the amidinate-type metal precursors, the results reported herein should also be of significant value for many other ALD processes.

Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design

Metal-organic Chemical Vapor Deposition of Aluminium Oxynitride from Propylamine–dimethylaluminium Hydride and Oxygen: Growth Mode Dependence and Performance Optimization

A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films

Self-reducing Precursors for Aluminium Metal Thin Films: Evaluation of Stable Aluminium Hydrides for Vapor Phase Aluminium Deposition

A Mass Spectrometrical Surface Chemistry Study of Aluminum Nitride ALD from Tris-Dimethylamido Aluminum and Ammonia

Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films

Atomic Layer Deposition of Aluminum (111) Thin Film by Dimethylethylaminealane Precursor

Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor

Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors

Precursors as enablers of ALD technology: Contributions from University of Helsinki

A Comparison Between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium As the Aluminium Precursors

Preparing aluminum nitride thin film by atomic layer deposition

(Invited) Surface Thermolysis of ALD Precursors and Its Implications for Deposition

Nucleation Effects in the Atomic Layer Deposition of Nickel–Aluminum Oxide Thin Films

Atomic Layer Deposition of Noble Metals – New Developments in Nanostructured Catalysts

Preparation of Aln Films by Pulsed Laser Deposition Using Sintered Aluminum Nitride and Elemental Aluminum As Raw Materials

Surface Thermolytic Behavior Of Nickel Amidinate And Its Implication On The Atomic Layer Deposition Of Nickel Compounds

Design and Self-catalytic Mechanism of Aluminum Precursors Bearing Amino Ligands for Al2S3 Atomic Layer Deposition