Abstract:Aspheric thin-walled crucibles with large diameters are widely used for photovoltaics and semiconductor industries, while they have hard-brittle and aspheric characteristics. Nevertheless, these crucibles strictly require atomic surfaces and high material removal rate (MRR). This is a challenge for chemical mechanical polishing (CMP). To break this challenge, a novel green CMP was developed for fused silica, containing ceria, lanthana, hydrogen peroxide, diethylene triaminepentaacetic acid pentasodium, carboxymethyl cellulose sodium and guanidine carbonate. After CMP, surface roughness Ra of 0.115 is obtained at a scanning area of 5 × 5 μm2 measured by atomic force microscopy, and MRR is 563 nm/min. In such an atomic surface, the MRR is the highest compared with those published previously. Transmission electron microscopy confirms that the thickness of damaged layer after CMP is only 2.63 nm. A novel approach of robot floating polishing is proposed for aspheric crucibles with a diameter of 810 mm and a height of 580 mm. Using the developed CMP, surface roughness Sa of 0.178 nm on inner surface of an aspheric thin-walled crucible is achieved under a measurement area of 50 × 50 μm2. X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance reveal that the content of Ce3+ increased from 28.54 to 43.76 %. Through Raman, XPS and Fourier transform infrared spectroscopy, CMP mechanisms are elucidated. Densified damaged layer on the surface of fused silica was induced by the transformation of surface structure from six-membered to four- or three-membered network. Ce-OH and Si-OH were formed between fused silica and ceria abrasives, forming Ce-O-Si by condensation reaction of dehydration. The developed green CMP and approach provide new pathway to polish and manufacture atomic surfaces for aspheric thin-walled crucibles with large diameters.

Achieving Ultralow Surface Roughness and High Material Removal Rate in Fused Silica Via a Novel Acid SiO2 Slurry and Its Chemical-Mechanical Polishing Mechanism

Application of surface analysis in study on removal mechanism and abrasive selection during fused silica chemical mechanical polishing

Development of core–shell SiO 2 @A-TiO 2 abrasives and novel photocatalytic chemical machinal polishing for atomic surface of fused silica

Angstrom surface with high material removal rate for quartz glass induced by silk dissolved novel green chemical mechanical polishing

Photocatalysis-Assisted Chemical Mechanical Polishing of SiC Wafer Using a Novel SiO2@TiO2 Core-Shell Composite Nanoparticles Slurry

Novel green chemical mechanical polishing of fused silica through designing synergistic CeO 2 /h-BN abrasives with lubricity

Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Characteristics of Slurry Recycling in Chemical Mechanical Polishing (CMP) of Fused Silica (FS)

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Particles Manipulation to Improve Removal Efficiency of Fused Silica in Chemical Mechanical Polishing

High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads

Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

Atomic surface induced by novel green chemical mechanical polishing for aspheric thin-walled crucibles with large diameters

Fused Silica Fine Grinding with Low Roughness

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

A special electrostatic self-assembly structure of colloidal silica: Improving Chemical Mechanical Polishing performance

Enhancing Slurry Stability and Surface Flatness of Silicon Wafers through Organic Amine-Catalyzed Synthesis Silica Sol

Single crystal silicon wafer polishing by pretreating pad adsorbing SiO2 grains and abrasive-free slurries

Achievement of a near-perfect smooth silicon surface