Abstract:Silica nanoparticles are widely utilized abrasives in chemical mechanical polishing (CMP), and the modification of abrasives and the incorporation of chemical additives represent primary strategies for enhancing CMP performance. In this study, we achieved a modification of the electrical properties of the colloidal silica surface by forming a coating film through the "grafting" of 3-aminopropyltriethoxysilane (APTES) onto the colloidal silica surface. This modification resulted in an augmented mechanical interaction between the abrasive and the wafer during the CMP process, leading to an enhanced material removal rate (MRR) of SiO 2 . However, the post-CMP surface exhibited a relatively higher occurrence of surface defects. Subsequently, cetyltrimethylammonium bromide (CTAB) was added as an auxiliary additive, which promoted the formation of a "special electrostatic self-assembly structure" on the surface of the abrasive, further elevating the SiO 2 MRR. Moreover, CTAB demonstrated the capability to adsorb onto the wafer surface, creating a protective effect that resulted in reduced surface roughness and a decrease in surface defects following CMP. Furthermore, comprehensive characterization of the modified abrasive was conducted using techniques such as transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The mechanisms underlying the improvement in CMP performance were systematically analyzed through experimental phenomena and X-ray photoelectron spectroscopy (XPS), and revealing that the introduction of CTAB indirectly facilitated the adsorption of APTES onto the surface of the colloidal silica. Our study provides a method for the advanced process of SiO 2 CMP with stringent metal ion requirements.

Particles Manipulation to Improve Removal Efficiency of Fused Silica in Chemical Mechanical Polishing

Achieving Ultralow Surface Roughness and High Material Removal Rate in Fused Silica Via a Novel Acid SiO2 Slurry and Its Chemical-Mechanical Polishing Mechanism

Effect of Modified Silica Abrasive Particles on Nanosized Particle Deposition in Final Polishing of Silicon Wafers

Methods and Mechanistic Analysis of Improving the Dispersion of Nano Silica Colloidal Particles in Chemical Mechanical Polishing Slurries

Optimizing of the Colloidal Dispersity of Silica Nanoparticle Slurries for Chemical Mechanical Polishing

Application of surface analysis in study on removal mechanism and abrasive selection during fused silica chemical mechanical polishing

Influence of Colloidal Silica Dispersion on the Decrease of Roughness in Silicon Chemical Mechanical Polishing

Characteristics of Slurry Recycling in Chemical Mechanical Polishing (CMP) of Fused Silica (FS)

Preparation of Silane Modified Sio2 Abrasive Particles and Their Chemical Mechanical Polishing (cmp) Performances

Enhancing Slurry Stability and Surface Flatness of Silicon Wafers through Organic Amine-Catalyzed Synthesis Silica Sol

Effect of nanosilica abrasive properties on tungsten chemical mechanical planarization

Photocatalysis-Assisted Chemical Mechanical Polishing of SiC Wafer Using a Novel SiO2@TiO2 Core-Shell Composite Nanoparticles Slurry

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Investigation of the Chemical Residuals on the Fused Silica During Chemical Mechanical Polishing

A special electrostatic self-assembly structure of colloidal silica: Improving Chemical Mechanical Polishing performance

Preparation of three-dimensional dendritic-like mesoporous silica particles and their pore size-dependent polishing behavior and mechanism

Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis

Chemical mechanical polishing of silicon wafers using developed uniformly dispersed colloidal silica in slurry

Preparation of Ordered Mesoporous Si02/Mc N anocomposite Abrasives and Their Chemical Polishing Behavior on Fused Silicon Substrates

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face