Abstract:Silica nanoparticles are widely utilized abrasives in chemical mechanical polishing (CMP), and the modification of abrasives and the incorporation of chemical additives represent primary strategies for enhancing CMP performance. In this study, we achieved a modification of the electrical properties of the colloidal silica surface by forming a coating film through the "grafting" of 3-aminopropyltriethoxysilane (APTES) onto the colloidal silica surface. This modification resulted in an augmented mechanical interaction between the abrasive and the wafer during the CMP process, leading to an enhanced material removal rate (MRR) of SiO 2 . However, the post-CMP surface exhibited a relatively higher occurrence of surface defects. Subsequently, cetyltrimethylammonium bromide (CTAB) was added as an auxiliary additive, which promoted the formation of a "special electrostatic self-assembly structure" on the surface of the abrasive, further elevating the SiO 2 MRR. Moreover, CTAB demonstrated the capability to adsorb onto the wafer surface, creating a protective effect that resulted in reduced surface roughness and a decrease in surface defects following CMP. Furthermore, comprehensive characterization of the modified abrasive was conducted using techniques such as transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The mechanisms underlying the improvement in CMP performance were systematically analyzed through experimental phenomena and X-ray photoelectron spectroscopy (XPS), and revealing that the introduction of CTAB indirectly facilitated the adsorption of APTES onto the surface of the colloidal silica. Our study provides a method for the advanced process of SiO 2 CMP with stringent metal ion requirements.

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The Cycle Characteristics of Slurries in Chemical Mechanical Polishing (CMP) of Fused Silica

Application of surface analysis in study on removal mechanism and abrasive selection during fused silica chemical mechanical polishing

Study on Pitch Performance Deterioration in Chemical Mechanical Polishing of Fused Silica

Preparation of Silane Modified Sio2 Abrasive Particles and Their Chemical Mechanical Polishing (cmp) Performances

Achieving Ultralow Surface Roughness and High Material Removal Rate in Fused Silica Via a Novel Acid SiO2 Slurry and Its Chemical-Mechanical Polishing Mechanism

Investigation of the Chemical Residuals on the Fused Silica During Chemical Mechanical Polishing

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XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Study on Chemical Mechanical Polishing Performances of Sapphire Wafer (0001) Using Silica-Based Slurry

Particles Manipulation to Improve Removal Efficiency of Fused Silica in Chemical Mechanical Polishing

Methods and Mechanistic Analysis of Improving the Dispersion of Nano Silica Colloidal Particles in Chemical Mechanical Polishing Slurries

Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

Chemical Mechanical Polishing of Aluminum Alloys using Alumina-Based Slurry

Development of core–shell SiO 2 @A-TiO 2 abrasives and novel photocatalytic chemical machinal polishing for atomic surface of fused silica

Novel green chemical mechanical polishing of fused silica through designing synergistic CeO 2 /h-BN abrasives with lubricity

Effects of Silica Abrasive Size on Sapphire Cmp Performances and Their Removal Mechanisms

Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0 0 0 1)

Chemical Mechanical Planarization (cmp) of On-Axis Si-Face Sic Wafer Using Catalyst Nanoparticles in Slurry

A special electrostatic self-assembly structure of colloidal silica: Improving Chemical Mechanical Polishing performance

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing