Abstract:Aspheric thin-walled crucibles with large diameters are widely used for photovoltaics and semiconductor industries, while they have hard-brittle and aspheric characteristics. Nevertheless, these crucibles strictly require atomic surfaces and high material removal rate (MRR). This is a challenge for chemical mechanical polishing (CMP). To break this challenge, a novel green CMP was developed for fused silica, containing ceria, lanthana, hydrogen peroxide, diethylene triaminepentaacetic acid pentasodium, carboxymethyl cellulose sodium and guanidine carbonate. After CMP, surface roughness Ra of 0.115 is obtained at a scanning area of 5 × 5 μm2 measured by atomic force microscopy, and MRR is 563 nm/min. In such an atomic surface, the MRR is the highest compared with those published previously. Transmission electron microscopy confirms that the thickness of damaged layer after CMP is only 2.63 nm. A novel approach of robot floating polishing is proposed for aspheric crucibles with a diameter of 810 mm and a height of 580 mm. Using the developed CMP, surface roughness Sa of 0.178 nm on inner surface of an aspheric thin-walled crucible is achieved under a measurement area of 50 × 50 μm2. X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance reveal that the content of Ce3+ increased from 28.54 to 43.76 %. Through Raman, XPS and Fourier transform infrared spectroscopy, CMP mechanisms are elucidated. Densified damaged layer on the surface of fused silica was induced by the transformation of surface structure from six-membered to four- or three-membered network. Ce-OH and Si-OH were formed between fused silica and ceria abrasives, forming Ce-O-Si by condensation reaction of dehydration. The developed green CMP and approach provide new pathway to polish and manufacture atomic surfaces for aspheric thin-walled crucibles with large diameters.

Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

Design of Composite Abrasives and Substrate Materials for Chemical Mechanical Polishing Applications

A special electrostatic self-assembly structure of colloidal silica: Improving Chemical Mechanical Polishing performance

Application of surface analysis in study on removal mechanism and abrasive selection during fused silica chemical mechanical polishing

Development of Mesoporous Abrasives and Its Unprecedented Polishing Performance Elucidated by a Novel Atomic Model

Development of Core–shell SiO2@A-TiO2 Abrasives and Novel Photocatalytic Chemical Machinal Polishing for Atomic Surface of Fused Silica

Novel Green Chemical Mechanical Polishing of Fused Silica Through Designing Synergistic CeO2/h-BN Abrasives with Lubricity

Development of core–shell SiO 2 @A-TiO 2 abrasives and novel photocatalytic chemical machinal polishing for atomic surface of fused silica

Novel green chemical mechanical polishing of fused silica through designing synergistic CeO 2 /h-BN abrasives with lubricity

Trivalent lanthanum and ytterbium doped meso-silica/ceria abrasive systems toward chemical mechanical polishing (CMP) and ultraviolet irradiation-assisted photochemical mechanical polishing (PCMP)

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

High-performance chemical mechanical polishing slurry for aluminum alloy using hybrid abrasives of zirconium phosphate and alumina

Atomic surface induced by novel green chemical mechanical polishing for aspheric thin-walled crucibles with large diameters

Atomic-scale surface of fused silica induced by chemical mechanical polishing with controlled size spherical ceria abrasives

A Novel Approach of Chemical Mechanical Polishing for Cadmium Zinc Telluride Wafers

Polishing Properties of Porous Silica Abrasive on Hard Disk Substrate CMP

A Novel Green CeO2 Polishing Slurry and Its Chemical Mechanical Action Mechanism for Achieving Atomic-Level Smoothing of Fused Silica Glass Surfaces

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Improved Chemical Mechanical Polishing Performance in 4H-Sic Substrate by Combining Novel Mixed Abrasive Slurry and Photocatalytic Effect

Chemical mechanical polishing for sapphire wafers using a developed slurry

Preparation of Silane Modified Sio2 Abrasive Particles and Their Chemical Mechanical Polishing (cmp) Performances