Abstract:Silica nanoparticles are widely utilized abrasives in chemical mechanical polishing (CMP), and the modification of abrasives and the incorporation of chemical additives represent primary strategies for enhancing CMP performance. In this study, we achieved a modification of the electrical properties of the colloidal silica surface by forming a coating film through the "grafting" of 3-aminopropyltriethoxysilane (APTES) onto the colloidal silica surface. This modification resulted in an augmented mechanical interaction between the abrasive and the wafer during the CMP process, leading to an enhanced material removal rate (MRR) of SiO 2 . However, the post-CMP surface exhibited a relatively higher occurrence of surface defects. Subsequently, cetyltrimethylammonium bromide (CTAB) was added as an auxiliary additive, which promoted the formation of a "special electrostatic self-assembly structure" on the surface of the abrasive, further elevating the SiO 2 MRR. Moreover, CTAB demonstrated the capability to adsorb onto the wafer surface, creating a protective effect that resulted in reduced surface roughness and a decrease in surface defects following CMP. Furthermore, comprehensive characterization of the modified abrasive was conducted using techniques such as transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The mechanisms underlying the improvement in CMP performance were systematically analyzed through experimental phenomena and X-ray photoelectron spectroscopy (XPS), and revealing that the introduction of CTAB indirectly facilitated the adsorption of APTES onto the surface of the colloidal silica. Our study provides a method for the advanced process of SiO 2 CMP with stringent metal ion requirements.

Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives

Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0 0 0 1)

Effects of Silica Abrasive Size on Sapphire Cmp Performances and Their Removal Mechanisms

Study on Chemical Mechanical Polishing Performances of Sapphire Wafer (0001) Using Silica-Based Slurry

Preparation of Non-spherical Colloidal Silica Nanoparticle and Its Application on Chemical Mechanical Polishing of Sapphire

An in Situ Study of Chemical-Mechanical Polishing Behaviours on Sapphire (0001) Via Simulating the Chemical Product-Removal Process by AFM-tapping Mode in Both Liquid and Air Environments

AFM and XPS Studies on Material Removal Mechanism of Sapphire Wafer During Chemical Mechanical Polishing (CMP)

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Chemical Mechanical Planarization (cmp) of On-Axis Si-Face Sic Wafer Using Catalyst Nanoparticles in Slurry

A Study of Chemical Products Formed on Sapphire (0001) During Chemical–mechanical Polishing

Characterization of sapphire chemical mechanical polishing performances using silica with different sizes and their removal mechanisms

Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

Achievement of a near-perfect smooth silicon surface

Chemical mechanical polishing for sapphire wafers using a developed slurry

Nanomaterials and Equipment for Chemical-Mechanical Polishing of Single-Crystal Sapphire Wafers

A special electrostatic self-assembly structure of colloidal silica: Improving Chemical Mechanical Polishing performance

The Effects of Ultra-Smooth Surface Atomic Step Morphology on CMP Performances of Sapphire and SiC Wafers

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Development of core–shell SiO 2 @A-TiO 2 abrasives and novel photocatalytic chemical machinal polishing for atomic surface of fused silica

Effect of colloidal silica particles on subsurface damage of fused silica optics during CMP process

Application of surface analysis in study on removal mechanism and abrasive selection during fused silica chemical mechanical polishing