Abstract:Colloidal silica occupies the field of polishing solution application of chemical mechanical polishing (CMP). Si -OH groups dominate the surface of colloidal silica nanoparticles, and their chemical nature, acidity, is a determining factor for CMP. However, due to the delicate nature, very vulnerable to self-condensation at elevated temperatures, of colloidal silica nanoparticles, traditional techniques used for characterizing powder samples are limited to gaining true insights into the chemical reactivity of these Si-OH groups without disturbing the surface chemistry, which hinders the deep exploration of the essential mechanism of CMP on silica. In this manuscript, low-field nuclear magnetic resonance (LF NMR) and freeze-drying-programmed temperature desorption (TPD) techniques were, for the first time, combined to investigate the true acidity of the surface Si-OH groups in colloidal silica with minimized perturbance from sample preparations. The results from both char-acterization methodologies complemented each other, and are in good agreement about the surface structure and acidity of the surface Si-OH groups on colloidal silica. The results demonstrate that the acidity of Si-OH hydroxyl groups on the surface of silica-soluble nanoparticles spreads in a very broad range from very weak, medium -strong, to very strong. CMP performance of sapphire substrates by using colloidal silica strongly correlates with the acidic nature of surface Si-OH groups at the acidic polishing condition. The stronger acidity of surface Si-OH groups, the higher material removal rates in sapphire polishing through the chemical bonding of depro-tonated Si -O-functional surface of colloidal silica with hydrolyzed sapphire Al-OH surface. Therefore, when a large number of Si -O-active centers in the basic environment attack the sapphire Al-OH sites, the rate of the chemical reaction is accelerated.

Characterization of sapphire chemical mechanical polishing performances using silica with different sizes and their removal mechanisms

Effects of Silica Abrasive Size on Sapphire Cmp Performances and Their Removal Mechanisms

Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0 0 0 1)

AFM and XPS Studies on Material Removal Mechanism of Sapphire Wafer During Chemical Mechanical Polishing (CMP)

Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives

A Study of Chemical Products Formed on Sapphire (0001) During Chemical–mechanical Polishing

Study on Chemical Mechanical Polishing Performances of Sapphire Wafer (0001) Using Silica-Based Slurry

Atomic Step Morphology Research of LED Sapphire Substrate Polishing Surface and Its Periodicity

Chemical mechanical polishing of sapphire wafer using mixed silica nanoparticles

Preparation of Non-Spherical Silica Composite Abrasives by Lanthanum Ion-Induced Effect and Its Chemical–mechanical Polishing Properties on Sapphire Substrates

A study on mechanism of sapphire polishing using the diamond abrasive by molecular dynamics

Atomic-scale surface of fused silica induced by chemical mechanical polishing with controlled size spherical ceria abrasives

Preparation of Non-spherical Colloidal Silica Nanoparticle and Its Application on Chemical Mechanical Polishing of Sapphire

Application of surface analysis in study on removal mechanism and abrasive selection during fused silica chemical mechanical polishing

Preparation of Flower-Shaped Silica Abrasives by Double System Template Method and Its Effect on Polishing Performance of Sapphire Wafers

Preparation of Silane Modified Sio2 Abrasive Particles and Their Chemical Mechanical Polishing (cmp) Performances

Sub-Nano Depth Scratches on Various Crystal Surfaces During Chemical Mechanical Polishing

An in Situ Study of Chemical-Mechanical Polishing Behaviours on Sapphire (0001) Via Simulating the Chemical Product-Removal Process by AFM-tapping Mode in Both Liquid and Air Environments

Surface Acidity of Colloidal Silica and Its Correlation with Sapphire Surface Polishing

Preparation of Irregular Silica Nanoparticles by the Polymer Templating for Chemical Mechanical Polishing of Sapphire Substrates

The Effects of Ultra-Smooth Surface Atomic Step Morphology on CMP Performances of Sapphire and SiC Wafers