Surface Acidity of Colloidal Silica and Its Correlation with Sapphire Surface Polishing
Yunyun Gu,Lei Wang,Jiapeng Chen,Zhenlin Jiang,Yulong Zhang,Wenjun Wang,Haibo Chen,Juanfen Shen,Jiyuan Zhong,Shihang Meng,Jun Li,Yongwei Zhu,Tao Sun
DOI: https://doi.org/10.1016/j.colsurfa.2022.129718
2022-01-01
Abstract:Colloidal silica occupies the field of polishing solution application of chemical mechanical polishing (CMP). Si -OH groups dominate the surface of colloidal silica nanoparticles, and their chemical nature, acidity, is a determining factor for CMP. However, due to the delicate nature, very vulnerable to self-condensation at elevated temperatures, of colloidal silica nanoparticles, traditional techniques used for characterizing powder samples are limited to gaining true insights into the chemical reactivity of these Si-OH groups without disturbing the surface chemistry, which hinders the deep exploration of the essential mechanism of CMP on silica. In this manuscript, low-field nuclear magnetic resonance (LF NMR) and freeze-drying-programmed temperature desorption (TPD) techniques were, for the first time, combined to investigate the true acidity of the surface Si-OH groups in colloidal silica with minimized perturbance from sample preparations. The results from both char-acterization methodologies complemented each other, and are in good agreement about the surface structure and acidity of the surface Si-OH groups on colloidal silica. The results demonstrate that the acidity of Si-OH hydroxyl groups on the surface of silica-soluble nanoparticles spreads in a very broad range from very weak, medium -strong, to very strong. CMP performance of sapphire substrates by using colloidal silica strongly correlates with the acidic nature of surface Si-OH groups at the acidic polishing condition. The stronger acidity of surface Si-OH groups, the higher material removal rates in sapphire polishing through the chemical bonding of depro-tonated Si -O-functional surface of colloidal silica with hydrolyzed sapphire Al-OH surface. Therefore, when a large number of Si -O-active centers in the basic environment attack the sapphire Al-OH sites, the rate of the chemical reaction is accelerated.