Abstract:Colloidal silica occupies the field of polishing solution application of chemical mechanical polishing (CMP). Si -OH groups dominate the surface of colloidal silica nanoparticles, and their chemical nature, acidity, is a determining factor for CMP. However, due to the delicate nature, very vulnerable to self-condensation at elevated temperatures, of colloidal silica nanoparticles, traditional techniques used for characterizing powder samples are limited to gaining true insights into the chemical reactivity of these Si-OH groups without disturbing the surface chemistry, which hinders the deep exploration of the essential mechanism of CMP on silica. In this manuscript, low-field nuclear magnetic resonance (LF NMR) and freeze-drying-programmed temperature desorption (TPD) techniques were, for the first time, combined to investigate the true acidity of the surface Si-OH groups in colloidal silica with minimized perturbance from sample preparations. The results from both char-acterization methodologies complemented each other, and are in good agreement about the surface structure and acidity of the surface Si-OH groups on colloidal silica. The results demonstrate that the acidity of Si-OH hydroxyl groups on the surface of silica-soluble nanoparticles spreads in a very broad range from very weak, medium -strong, to very strong. CMP performance of sapphire substrates by using colloidal silica strongly correlates with the acidic nature of surface Si-OH groups at the acidic polishing condition. The stronger acidity of surface Si-OH groups, the higher material removal rates in sapphire polishing through the chemical bonding of depro-tonated Si -O-functional surface of colloidal silica with hydrolyzed sapphire Al-OH surface. Therefore, when a large number of Si -O-active centers in the basic environment attack the sapphire Al-OH sites, the rate of the chemical reaction is accelerated.

Study on Chemical Mechanical Polishing Performances of Sapphire Wafer (0001) Using Silica-Based Slurry

Research on the Polishing Performance of CMP Slurry for the Sapphire Crystal

Chemical mechanical polishing for sapphire wafers using a developed slurry

AFM and XPS Studies on Material Removal Mechanism of Sapphire Wafer During Chemical Mechanical Polishing (CMP)

Effect of Chloride Ions on the Chemical Mechanical Planarization Efficiency of Sapphire Substrate

Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives

Experimental Study of Ultrasonic Vibration Assisted Chemical Mechanical Polishing for Sapphire Substrate

Effects of Silica Abrasive Size on Sapphire Cmp Performances and Their Removal Mechanisms

Chemical mechanical polishing (CMP) anisotropy in sapphire

A Study of Chemical Products Formed on Sapphire (0001) During Chemical–mechanical Polishing

Machining performance and material removal mechanism of sapphire with novel polishing slurry

Effects of the Ultrasonic Flexural Vibration on the Interaction Between the Abrasive Particles; Pad and Sapphire Substrate During Chemical Mechanical Polishing (CMP)

High Efficiency Chemical Mechanical Polishing for Silicon Wafers Using a Developed Slurry

Effect of Potassium Persulfate As an Additive on Chemical Mechanical Polishing Performance on C-, A- and R-Plane Sapphire

Preparation of Non-spherical Colloidal Silica Nanoparticle and Its Application on Chemical Mechanical Polishing of Sapphire

STUDY ON CHEMICAL MECHANICAL POLISHING OF R-PLANE SAPPHIRE BY DIFFERENT ADDITIVES

Study on the polishing performance and mechanism of sapphire wafers by different types of degradable surfactants

Nanomaterials and Equipment for Chemical-Mechanical Polishing of Single-Crystal Sapphire Wafers

Effect of the carboxyl group number of the complexing agent on polishing performance of alumina slurry in sapphire CMP

Surface Acidity of Colloidal Silica and Its Correlation with Sapphire Surface Polishing

Preparation of Γ‐alumina/silica Core–shell Abrasives and Their Chemical Mechanical Polishing Performances on Sapphire Substrates