Abstract:Chemical mechanical polishing (CMP) is the most effective technology for the global and local planarization of metal surfaces. In this study, an environment-friendly and highly efficient CMP slurry for aluminum alloy is prepared by using 2D layered zirconium phosphate (ZrP) platelets and alumina (Al2O3) particles as hybrid abrasives, polyethylene glycol (PEG) as dispersant, hydrogen peroxide (H2O2) as oxidant and sodium dodecyl sulfate (SDS) as corrosion inhibitor. Using the optimized CMP slurry, surface roughness (Ra) of aluminum alloy is decreased from ∼200 nm to ∼13 nm and material removal rate (MRR) can be increased from 150 nm/min to 300 nm/min. The addition of ZrP platelets can improve the stability and dispersion of the Al2O3 abrasives due to the PEG-induced hydrogen bonding interactions between the used hybrid abrasives. Moreover, the X-ray photoelectron spectroscopy (XPS) and electrochemical analysis reveal that adjusting the concentrations of H2O2 and SDS in the CMP slurry would help to achieve an excellent balance between the chemical corrosion and mechanical removal. The use of binary hybrid abrasives in CMP slurries provides a novel route for the efficient planarization of aluminum alloy and also sheds light on precise polishing for metallic and non-metallic materials with desired surface requirements.

What problem does this paper attempt to address?

This paper aims to solve the problems existing in the chemical - mechanical polishing (CMP) process of aluminum alloys, specifically including: 1. **High surface roughness**: The traditional CMP process has difficulty reducing the surface roughness of aluminum alloys to a very low level. Especially in some high - end applications, such as circuit boards and aluminum gates, the requirements for surface roughness are very high. 2. **Low material removal rate**: The existing CMP technology has limitations in increasing the material removal rate and cannot meet the needs of efficient polishing. 3. **Balance between chemical corrosion and mechanical removal**: In the CMP process, a good balance between chemical corrosion and mechanical removal is required to achieve efficient polishing results. However, at present, the balance control between these two mechanisms is not perfect enough. 4. **Environmental friendliness**: Acid substances (such as nitric acid, sulfuric acid, and phosphoric acid) used in traditional CMP slurries will cause environmental pollution. Therefore, the development of environmentally - friendly CMP slurries has become an urgent need. To solve the above problems, the paper proposes a new type of CMP slurry. This slurry uses 2D layered zirconium phosphate (ZrP) flakes and aluminum oxide (Al₂O₃) particles as mixed abrasives and adds components such as polyethylene glycol (PEG), hydrogen peroxide (H₂O₂), and sodium dodecyl sulfate (SDS). By optimizing the proportions of these components, the paper has achieved the following goals: - Significantly reduced the surface roughness of aluminum alloys, from about 200 nanometers to about 13 nanometers. - Increased the material removal rate, from about 150 nanometers/minute to about 300 nanometers/minute. - Improved the stability and dispersibility of the slurry, especially under the synergistic effect of the mixed abrasives. - Adjusted the balance between chemical corrosion and mechanical removal, and achieved the best polishing performance by adjusting the concentrations of H₂O₂ and SDS. Through these improvements, the paper provides a new method for developing efficient and environmentally - friendly CMP technologies, especially suitable for the precision polishing of integrated circuits, optical instruments, and electronic devices.

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