Chemical Mechanical Polishing of Aluminum Alloys using Alumina-Based Slurry

Zefang ZHANG,Wenjuan ZHANG,Shanduan ZHANG,Fuyou LI
DOI: https://doi.org/10.16078/j.tribology.2018032
2019-01-01
Tribology
Abstract:Chemical mechanical polishing has become potential global planarization technology for metal alloy.In this paper,we reported the CMP performances of aluminum alloy using alumina-based slurry.The influence of abrasive size,dispersant concentration (weight fraction) and pH-controlling agents on CMP performances were investigated,respectively.It is found that,with the particle size increased,the material removal rate and average surface roughness increased,while the glossiness decreased.When the weight fraction of PEG-600 reached 0.5% (weight fraction),the minimum Ra and the best glossiness can be achieved.Among kinds of the pH-controlling agents,citric acid proved to be efficient for lowest statics etch amount,highest MRR and best glossiness.In addition,the static etch and CMP mechanisms of alumina-based slurry were briefly discussed.The mechanisms revealed that citric acid on A1 alloy CMP performance:responsed to combined effects of corrosion and chelation.The optimized alumina-based slurry ingredient was Al2O3,3.3 μm;H2O2,4%;PEG-600,0.5%;H3Cit,1.5%.This is different from the traditional polishing,in which hazardous chemicals HNO3 and H2SO4 were used for Al alloys.
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