Abstract:Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to reduce the surface roughness and remove surface defects, precision polishing of single-crystal SiC is essential. In this paper, precision polishing technologies for 4H-SiC and 6H-SiC, which are the most commonly used polytypes of single-crystal SiC, such as chemical mechanical polishing (CMP), photocatalytic chemical mechanical polishing (PCMP), plasma-assisted polishing (PAP), electrochemical mechanical polishing (ECMP), and catalyst-referred etching (CARE), were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness. An atomically smooth surface without SSD can be obtained by CMP, PCMP, PAP, and CARE for single-crystal SiC. However, their MRRs are meager, and the waste treatment after CMP is difficult and expensive. Moreover, PAP’s operation is poor due to the complex polishing system, plasma generation, and irradiation devices. A high MRR can be achieved by ECMP. In addition, it is an environmentally friendly precision polishing process for single-crystal SiC since the neutral salt solution is generally used as the electrolyte in ECMP. However, the formation of the egglike protrusions at the oxide/SiC interface during anodic oxidation would lead to a bigger surface roughness after ECMP than that after PAP is processed. The HF solution used in CARE was toxic, and Pt was particularly expensive. Ultrasonic vibration-assisted single-crystal SiC polishing and electrolyte plasma polishing (EPP) were discussed; furthermore, the research direction of further improving the surface quality and MRR of single-crystal SiC was prospected.

High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Influences of Nonaqueous Slurry Components on Polishing 4H-Sic Substrate with a Fixed Abrasive Pad

Mechanistic difference between Si-face and C-face polishing of 4H–SiC substrates in aqueous and non-aqueous slurries

Single crystal silicon wafer polishing by pretreating pad adsorbing SiO2 grains and abrasive-free slurries

Investigation on Electrical Enhanced Photocatalysis Polishing of Single-Crystal Silicon Carbide Substrates

Accelerated C-face polishing of silicon carbide by alkaline polishing slurries with Fe3O4 catalysts

Investigation On Smoothing Silicon Carbide Wafer With A Combined Method Of Mechanical Lapping And Photocatalysis Assisted Chemical Mechanical Polishing

Development of Electrical Enhanced Photocatalysis Polishing Slurry for Silicon Carbide Wafer

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Photocatalysis-Assisted Chemical Mechanical Polishing of SiC Wafer Using a Novel SiO2@TiO2 Core-Shell Composite Nanoparticles Slurry

Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis

High Efficiency Chemical Mechanical Polishing for Silicon Wafers Using a Developed Slurry

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Simulation of Chemical Reactions with Methanol and Oxalic Acid on 4H-Sic Surfaces Before and after Nanoabrasion

Atomic Surface of Silicon Wafers Induced by Grafted Silica Nanoparticles and Sodium Carbonate

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Improved Chemical Mechanical Polishing Performance in 4H-Sic Substrate by Combining Novel Mixed Abrasive Slurry and Photocatalytic Effect

Molecular dynamics study of the removal mechanism of SiC in a fixed abrasive polishing in water lubrication

A Review on Precision Polishing Technology of Single-Crystal SiC