Abstract:Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to reduce the surface roughness and remove surface defects, precision polishing of single-crystal SiC is essential. In this paper, precision polishing technologies for 4H-SiC and 6H-SiC, which are the most commonly used polytypes of single-crystal SiC, such as chemical mechanical polishing (CMP), photocatalytic chemical mechanical polishing (PCMP), plasma-assisted polishing (PAP), electrochemical mechanical polishing (ECMP), and catalyst-referred etching (CARE), were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness. An atomically smooth surface without SSD can be obtained by CMP, PCMP, PAP, and CARE for single-crystal SiC. However, their MRRs are meager, and the waste treatment after CMP is difficult and expensive. Moreover, PAP’s operation is poor due to the complex polishing system, plasma generation, and irradiation devices. A high MRR can be achieved by ECMP. In addition, it is an environmentally friendly precision polishing process for single-crystal SiC since the neutral salt solution is generally used as the electrolyte in ECMP. However, the formation of the egglike protrusions at the oxide/SiC interface during anodic oxidation would lead to a bigger surface roughness after ECMP than that after PAP is processed. The HF solution used in CARE was toxic, and Pt was particularly expensive. Ultrasonic vibration-assisted single-crystal SiC polishing and electrolyte plasma polishing (EPP) were discussed; furthermore, the research direction of further improving the surface quality and MRR of single-crystal SiC was prospected.

Investigation on Electrical Enhanced Photocatalysis Polishing of Single-Crystal Silicon Carbide Substrates

Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Investigation on Enhanced Machinability of SiC Ceramics through Photocatalytic Vibration Composite Polishing

Photocatalysis-Assisted Chemical Mechanical Polishing of SiC Wafer Using a Novel SiO2@TiO2 Core-Shell Composite Nanoparticles Slurry

Study on electrochemical mechanical polishing process of silicon carbide crystal

High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads

Photocatalytic assisted chemical mechanical polishing for silicon carbide using developed ceria coated diamond core-shell abrasives

Chemical Mechanical Polishing of 4H-SiC Wafer with UV-LED Light

Polishing single-crystal silicon carbide with porous structure diamond and graphene-TiO2 slurries

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Single crystal silicon wafer polishing by pretreating pad adsorbing SiO2 grains and abrasive-free slurries

A Review on Precision Polishing Technology of Single-Crystal SiC

An experimental investigation of scan trajectory into the underwater femtosecond laser polishing SiC ceramic

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Development of core–shell SiO 2 @A-TiO 2 abrasives and novel photocatalytic chemical machinal polishing for atomic surface of fused silica

Accelerated C-face polishing of silicon carbide by alkaline polishing slurries with Fe3O4 catalysts

Chemical Mechanical Polishing (CMP) of SiC Wafer Using Photo-Catalyst Incorporated Pad

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing