Abstract:Oxide films of the quality required for the fabrication of electronic and photonic devices are typically deposited at elevated temperatures and thermal equilibrium, thereby adversely impacting thermal budgets. We report the deposition and patterning of silicon dioxide (SiO2) films of high electrical and optical quality on Si(100) or polymer substrates in a N2 atmosphere and at 300 K by the photochemical conversion of thin liquid tetraethoxysilane (TEOS) layers with narrowband vacuum ultraviolet radiation [vacuum ultraviolet (VUV), 172 nm] provided by efficient microplasma lamps. Irradiating liquid TEOS layers, produced by spin-coating the precursor onto a substrate, with a VUV intensity of 13 mW cm−2, yields 40 nm-thick SiO2 films having a dielectric breakdown strength (Eb) of 5 MV cm−1, for which no precedent exists in the deposition of oxide films at 300 K. If room temperature-deposited films are post-annealed at 200 °C, Eb rises to 7.5 MV cm−1, which is <12% below the measured value (8.5 MV cm−1) for 40 nm SiO2 films grown by thermal oxidation. The deposition of 1 μm thick, stoichiometric SiO2 films requires only 20 min of VUV illumination at low optical fluences, and films with thicknesses of ∼35–60 nm exhibit a refractive index of 1.45 (633 nm). X-ray photoelectron spectrometry and Rutherford backscattering analysis indicate that, despite the deposition temperature, hydrocarbon impurity levels are near or below the detection limit. The capability for depositing 960 nm-thick SiO2 films uniformly (to within 0.6%) by liquid → solid photochemical conversion over a 5 cm diameter Si substrate and patterning films onto flexible polymer substrates has also been demonstrated.

Low-energy O+ or SiO+ ion beam induced deposition of silicon oxide using hexamethyldisiloxane

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Low-energy N+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate, hexamethyldisiloxane, or hexamethyldigermane

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Properties of amorphous SiO2 films prepared by reactive RF magnetron sputtering method

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

The Power Source Effect on SiOx Coating Deposition by Plasma Enhanced Chemical Vapor Deposition

Effect of the Monomer TEOS Flow Rate on the Formation of Silicon Dioxide Films by Nonequilibrium,atmospheric Pressure Plasma Jet

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

Low-Temperature Atmospheric-Pressure Plasma-Enhanced Chemical Deposition of Silicon Dioxide Films from Tetraethoxysilane

Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K

In-situ diagnosis during preparation of SiO_x thin films by mass spectroscopy and their characteristics

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

Aerosol assisted low temperature plasma torch at atmospheric pressure for an efficient deposition of SiO2 thin films

Deposition of Thin Films From HMDSO Utilizing the Vacuum UV Radiation From an Atmospheric Plasma

Deposition of dielectric films on silicon using a fore-vacuum plasma electron source