Construction and evaluation of an ultrahigh-vacuum-compatible sputter deposition source

Peter Lackner,Joong Il Jake Choi,Ulrike Diebold,Michael Schmid

DOI: https://doi.org/10.1063/1.4998700

2017-10-18

Abstract:A sputter deposition source for use in ultrahigh vacuum (UHV) is described and some properties of the source are analyzed. The operating principle is based on the design developed by Mayr et al. [Rev. Sci. Instrum. 84, 094103 (2013)], where electrons emitted from a filament ionize argon gas, and the Ar$^+$ ions are accelerated to the target. In contrast to the original design, two grids are used to direct a large fraction of the Ar$^+$ ions to the target, and the source has a housing cooled by liquid nitrogen to reduce contaminations. The source has been used for deposition of zirconium, a material that is difficult to evaporate in standard UHV evaporators. At an Ar pressure of $9\times 10^{-6}$ mbar in the UHV chamber and moderate emission current, a highly reproducible deposition rate of $\approx 1$ monolayer in 250 s was achieved at the substrate (at a distance of $\approx 50$ mm from the target). Higher deposition rates are easily possible. X-ray photoelectron spectroscopy shows a high purity of the deposited films. Depending on the grid voltages, the substrate gets mildly sputtered by Ar$^+$ ions; in addition, the substrate is also reached by electrons from the negatively biased sputter target.

Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to construct and evaluate a sputtering deposition source suitable for ultra - high - vacuum (UHV) environments in order to achieve the growth of high - quality thin films. Specifically, the paper focuses on the following aspects:

1. **Improving deposition efficiency and purity**: Traditional evaporation methods have difficulties in depositing certain materials (such as zirconium Zr) in ultra - high - vacuum because these materials require extremely high temperatures to reach sufficient vapor pressure. In addition, impurities are easily introduced during the evaporation process, affecting the quality of the thin films. In contrast, sputtering deposition can be carried out at lower temperatures and can provide purer thin films.

2. **Optimizing the design to improve ion utilization**: In the original design, only a small portion of argon ions (Ar⁺) can strike the target, resulting in low deposition efficiency. The paper proposes a double - grid design, which enables more argon ions to be guided to the target, thereby increasing the deposition efficiency.

3. **Reducing contamination**: In order to reduce the possible contamination during the deposition process, this design adopts a liquid - nitrogen cooling system to maintain a low temperature inside the deposition source and prevent the wall materials from volatilizing or adsorbing onto the substrate due to high temperature.

4. **Controlling ion energy**: By adjusting the grid voltage, the energy of argon ions arriving at the substrate can be controlled, thereby achieving ion - beam - assisted deposition (IBAD) or minimizing the sputtering effect on the substrate and the thin film.

### Specific problem description

- **Material selection**: For example, zirconium (Zr), due to its high melting point and the difficulty in obtaining a sufficiently high vapor pressure under normal evaporation conditions, is difficult to be deposited in ultra - high - vacuum by the traditional evaporation method.

- **Deposition rate and uniformity**: In an ultra - high - vacuum environment, ensuring the stability and uniformity of the deposition rate is a challenge. The paper achieves a highly reproducible deposition rate through the improved design, reaching the effect of depositing about 1 monolayer every 250 seconds.

- **Thin - film purity**: X - ray photoelectron spectroscopy (XPS) analysis shows that the deposited thin films have a very high purity, and the presence of carbon or other impurities is hardly detected.

### Summary

Through the improved double - grid design and the liquid - nitrogen cooling system, the paper successfully solves the problem of difficult deposition of certain materials in an ultra - high - vacuum environment and achieves efficient and high - purity thin - film growth. In addition, this design also provides precise control of ion energy during the deposition process, making it suitable for the deposition of a variety of materials.