Abstract:Plasma-enhanced atomic layer deposition (PE-ALD) is widely employed in microelectronics, energy, and sensing applications. Typically, PE-ALD processes for metal oxides utilize remote inductively coupled plasmas operated at powers of >200 W, ensuring a sufficient flux of oxygen radicals to the growth surface. However, this approach often leads to significant oxidation of chemically sensitive substrates, including most technological semiconductors. Here, we demonstrate that plasma powers as low as 5 W can effectively suppress substrate oxidation while maintaining the structural, optical, and electronic quality of the films. Specifically, we investigate the growth of titanium oxide (TiOx) using two commonly used metalorganic precursors, titanium isopropoxide and tetrakis(dimethylamino)titanium. Films deposited with 5 and 300 W oxygen plasma power are nearly indiscernible from one another, exhibiting significantly lower defect concentrations than those obtained from thermal ALD with H2O. The low plasma power process preserves desired physical characteristics of PE-ALD films, including large optical constants (n > 2.45 at 589 nm), negligible defect-induced sub-bandgap optical absorption (α < 102 cm−1), and high electrical resistivity (>105 Ω cm). Similar behavior, including suppressed interface oxidation and low defect content, is observed on both Si and InP substrates. As an example application of this approach, the assessment of InP/TiOx photocathodes and Si/TiOx photoanodes reveals a significant improvement in the photocurrent onset potential in both cases, enabled by suppressed substrate oxidation during low power PE-ALD. Overall, low power PE-ALD represents a generally applicable strategy for producing high quality metal oxide thin films while minimizing detrimental substrate reactions.

Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

Preparation Of Low-K Nanoporous Sio2 Films By Plasma-Enhanced Chemical Vapor Deposition

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition

Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2.

Effect of the Monomer TEOS Flow Rate on the Formation of Silicon Dioxide Films by Nonequilibrium,atmospheric Pressure Plasma Jet

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

Suppressing substrate oxidation during plasma-enhanced atomic layer deposition on semiconductor surfaces

Plasma enhanced atomic layer deposition of silicon nitride using magnetized very high frequency plasma

Aerosol assisted low temperature plasma torch at atmospheric pressure for an efficient deposition of SiO2 thin films

Synthesis of titanium dioxide thin films via thermo- and plasma-enhanced atomic layer deposition

Low-Temperature Atmospheric-Pressure Plasma-Enhanced Chemical Deposition of Silicon Dioxide Films from Tetraethoxysilane

Plasma-enhanced atomic layer deposition of silicon nitride thin films with different substrate biasing using Diiodosilane precursor

Plasma Enhanced Atomic Layer Deposited Platinum Thin Film on Si Substrate with Tma Pretreatment

Sub-micrometer plasma-enhanced chemical vapor deposition using an atmospheric pressure plasma jet localized by a nanopipette scanning probe microscope

Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition

Preparation of Polycrystalline Silicon Films by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature

Formation of SiO2 Thin Films Through Plasma- Enhanced Chemical Vapor Deposition Using SiH4/Ar/N2O

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy