Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

Lenian He,Seiichi Hasegawa

DOI: https://doi.org/10.1016/S0040-6090(00)01873-3

IF: 2.1

2001-01-01

Thin Solid Films

Abstract:Amorphous SiO2 (a-SiO2) films were prepared at 300°C by means of plasma-enhanced chemical vapor deposition (PE-CVD) using a SiH4–O2 mixture. The properties of infrared (IR) absorption for SiO bonds have been investigated as a function of film thickness, d. It was found that the apparent absorbances, αapp, for both 800 and 1050 cm−1 bands, arising from SiO bending and stretching modes, respectively, were proportional to d as αapp=k×d. The proportionality constants k for 800 and 1050 cm−1 bands are estimated to be 3.2×103 and 2.9×104 cm−1, respectively. Consequently, the film thickness for PE-CVD a-SiO2 can be determined nondestructively using IR absorption techniques. However, the integrated absorption intensity for the 1050 cm−1 bands increased with increasing d. In contrast, the integrated absorption intensity for 800 cm−1 band was independent of d. The properties of infrared absorption for both SiO stretching and bending modes are discussed.