Evolution of Optical Constants of Silicon Dioxide on Silicon from Ultrathin Films to Thick Films

Qing-Yuan Cai,Yu-Xiang Zheng,Peng-Hui Mao,Rong-Jun Zhang,Dong-Xu Zhang,Ming-Hui Liu,Liang-Yao Chen

DOI: https://doi.org/10.1088/0022-3727/43/44/445302

2010-01-01

Abstract:A series of SiO2 films with thickness range 1–600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO2 films thicker than 60 nm are close to those of bulk SiO2. For the thin films deposited at the rate of ∼1.0 nm s−1, the refractive indices increase with decreasing thickness from ∼60 to ∼10 nm and then drop sharply with decreasing thickness below ∼10 nm. However, for thin films deposited at the rates of ∼0.4 and ∼0.2 nm s−1, the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.