Abstract:Growing high-quality Si films at high rates with thicknesses ranging from the few nm- to μm-range while keeping the material consumption at a minimum is important for a wide range of Si-based technologies, spanning from batteries to sensors and solar cells. In this work, we elucidate the effects of electron beam deposition (e-beam) conditions on the growth of ~4 μm thick Si layers on bare and thermally oxidized (001)-oriented Si substrates. All depositions are performed from a stabilized and refillable melt of broken B-doped wafers and recollected using Si-shields during deposition for recycling. We find that increasing the deposition rate from 0.3 to 23 nm/s at a substrate temperature of 1000 °C reduces the roughness, void fraction, and residual stress of epitaxial Si-on-Si layers. For Si-on-SiO2, all films are polycrystalline under the same deposition conditions as for Si-on-Si, with a reduction in void fraction and increase in roughness at higher deposition rates. The residual stress for Si-on-SiO2 is comparable across all deposition rates >1 nm/s. Furthermore, we measure lower resistivities in the films than in the feedstock for Si-on-Si and higher than the feedstock for Si-on-SiO2. While the films become microstructurally denser and less defective at higher deposition rates, the resistivity increases for each next deposition step in the case of multi-step depositions from the same feedstock. Time-of-flight scanning secondary mass spectroscopy measurements show that the films have a significantly higher B-concentration than the feedstock, suggesting B-gettering to the melted region and transferring to the Si film upon the e-beam deposition process. This work demonstrates how electron beam evaporation can be used to recollect and recycle waste Si pieces, bringing important insights into how the deposition parameters influence the quality of the deposited polycrystalline as well as epitaxial thin-to-thick films.

Investigation on Thick Silicon Dioxide Films Evaporation by Electron Beam Evaporation

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

Properties of plasma-deposited amorphous SiO2 films

Evolution of Optical Constants of Silicon Dioxide on Silicon from Ultrathin Films to Thick Films

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation

Effect of substrate temperature and annealing on the structure and opto-electrical properties of silicon carbide thin films prepared by e-beam evaporation

Influence of Liquid Evaporation on the Components of SiC High Emissivity Coating

Electron beam-physical vapor deposition of SiC/SiO2 high emissivity thin film

Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K

High-Quality ZrO2 Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation

Characterization of the Evaporation Behavior of a Β-Sic Target During Electron Beam-Physical Vapor Deposition

Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation

High-vacuum Electron-Beam Co-Evaporation of Si Nanocrystals Embedded in Al2O3 Matrix

Modification of low-temperature silicon dioxide films under the influence of technology factors

Ellipsometric Study of the Optical Properties of Silicon-Based Si : Sio2 Composite Thin Films under Different Annealing Temperatures

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Study of Hfsio Film Prepared by Electron Beam Evaporation for High-K Gate Dielectric Applications

Dielectric properties of films of silicon monoxide