Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

Modification of low-temperature silicon dioxide films under the influence of technology factors

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Ellipsometric Study of the Optical Properties of Silicon-Based Si : Sio2 Composite Thin Films under Different Annealing Temperatures

Low-Temperature Atmospheric-Pressure Plasma-Enhanced Chemical Deposition of Silicon Dioxide Films from Tetraethoxysilane

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Investigation on Thick Silicon Dioxide Films Evaporation by Electron Beam Evaporation

Insights into Effects of Thermal Annealing on Optical Properties of SiO2films

Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate

Effects Of Deposition Pressure On Properties Of Carbon-Doped Silicon Oxide Low Dielectric Constant Films

Study on Optical Anisotropy Properties of SiO2 Films with Different Thermal Annealing Temperatures

Low-temperature ion beam sputtered optical coatings

Influence of thermal annealing on silicon negative ion implanted SiO2 thin films

Effect of substrate temperature and annealing on the structure and opto-electrical properties of silicon carbide thin films prepared by e-beam evaporation

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

Effects of Composition and Thermal Annealing on the Mechanical Properties of Silicon Oxycarbide Films

The Optoelectronic Properties of Silicon Films Deposited by Inductively Coupled Plasma CVD

Effect of N2 Plasma Annealing on Properties of Fluorine Doped Silicon Dioxide Films with Low Dielectric Constant for Ultra-Large-Scale Integrated Circuits

Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature