Abstract:Silicon monoxide is a material which is commonly used as a dielectric medium in thin film capacitors and as an insulating layer in various vacuum evaporated devices, e.g., thin film transistors. It has been shown in a previous publication1 that the most important parameter in the preparation of this material is the ratio of the number of silicon monoxide molecules arriving at the substrate in unit time compared with the corresponding number of residual gas molecules. This ratio affects the degree of oxidation of the material during deposition and this in turn affects the physical properties, e.g., mechanical stress, porosity and susceptability to further oxidation. This is shown in Figure 1. The horizontal axis is calibrated in units of the arrival ratio N (i. e., the rate of arrival of SiO gas molecules/O2 in this case). The fraction of incident light transmitted gives a measure of the degree of film oxidation since at the wavelength used (3, 500 Å) the transmission of SiO is very much less than that of SiO2. It can be seen from the vacuum value curve that the film tends to SiO2 as N is decreased (either by decreasing the evaporation rate or by increasing the gas pressure). Typically, for a residual atmosphere of oxygen, N = 1 when the rate of deposition is 10 Å/ sec and the pressure is 8 × 10−6 torr. It can also be seen that exposing the film to the atmosphere causes an increase in the oxidation in every case. This increase is particularly strong for low N films which are very susceptible to the atmosphere, both the oxygen and the water vapor contents of the atmosphere having a strong effect. For this reason it was decided to perform all tests on the films in the original vacuum to ensure that the effects of oxidation were minimized.

Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Preparation Of Low-K Nanoporous Sio2 Films By Plasma-Enhanced Chemical Vapor Deposition

Properties of plasma-deposited amorphous SiO2 films

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Properties of amorphous SiO2 films prepared by reactive RF magnetron sputtering method

Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

Effect of the Monomer TEOS Flow Rate on the Formation of Silicon Dioxide Films by Nonequilibrium,atmospheric Pressure Plasma Jet

Low-Temperature Atmospheric-Pressure Plasma-Enhanced Chemical Deposition of Silicon Dioxide Films from Tetraethoxysilane

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Silicon dioxide film deposited by photoassisted microwave plasma CVD using TEOS

Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K

Dielectric properties of films of silicon monoxide

Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Characterization of High Rate Deposited PECVD Silicon Dioxide Films for MCM Applications

Study of SiO2 Films Prepared by Electron Cyclotron Resonant Microwave Plasma

Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor