Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation

D GONG,D LI,Z YUAN,M WANG,D YANG
DOI: https://doi.org/10.1016/j.apsusc.2008.01.118
IF: 6.7
2008-01-01
Applied Surface Science
Abstract:Single-phase semiconducting iron disilicide (β-FeSi2) films on silicon substrate were fabricated by electron beam evaporation (EBE) technique. For preventing the oxidation of Fe film, silicon/iron/silicon sandwich structure films with different thickness of silicon and iron were deposited and then annealed at different temperatures. X-ray diffraction (XRD), Raman and Fourier transform infrared spectroscopy (FTIR) measurements were carried out to study the phase distribution and crystal quality of the films. Single-phase β-FeSi2 with high crystal quality was achieved after annealing at 800°C for 5h. An apparent direct bandgap Eg of approximately 0.85–0.88eV was observed in the β-FeSi2 films. It is considered that the silicon/iron/silicon sandwich structure is suited for formation of single-phase β-FeSi2 with high crystal quality.
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