Magnetic Properties of Fe0.95co0.05si2 Semiconducting Film

Y. P. Han,X. J. Wang,Q. R. Hou,Q. W. Wang,J. X. Wang
DOI: https://doi.org/10.1142/s0217984912500972
2012-01-01
Modern Physics Letters B
Abstract:The Fe0.95Co0.05Si2 semiconducting film has been successfully grown on glass substrate by magnetron sputtering at substrate temperature of 637 K and then thermal annealing at 823 K for one hour in high vacuum. The Raman data and high Seebeck coefficient suggested that the beta-Fe0.95Co0.05Si2 semiconducting film was achieved. Room temperature ferromagnetism was observed, and the ferromagnetic phase transition was at about 380 K. The possible reason for the ferromagnetism of the beta-Fe0.95Co0.05Si2 semiconducting film was discussed.
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