Magneto-transport and electronic structures in MoSi2 bulks and thin films with different orientations
Wafa Afzal,Frank Fei Yun,Zhi Li,Zengji Yue,Weiyao Zhao,Lina Sang,Guangsai Yang,Yahua He,Germanas Peleckis,Michael Fuhrer,Xiaolin Wang
DOI: https://doi.org/10.1016/j.jallcom.2020.157670
IF: 6.2
2021-03-01
Journal of Alloys and Compounds
Abstract:We report a comprehensive study of magneto-transport properties in MoSi2 bulk and thin films. Textured MoSi2 thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi2 single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperatures, the MR of the textured thin films show weak anti-localization behaviour owing to the spin orbit coupling effects. Our first principle calculation show the presence of surface states in this material. The resistivity of all the MoSi2 thin films is significantly low and nearly independent of the temperature, which is important for electronic devices.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering