Low Temperature Transport Properties in Ferromagnetic Gamnasfilms

H. T. He,C. L. Yang,J. C. Ji,Y. Q. Wang,W. K. Ge,J. N. Wang
DOI: https://doi.org/10.1063/1.2730330
2007-01-01
Abstract:The temperature dependence of the resistivity of ferromagnetic GaMnAs films with various Mn compositions and film thicknesses is measured. Resistivity minima are observed at low temperatures for all the GaMnAs samples studied. Below the temperature corresponding to the resistivity minimum, a logarithmic temperature dependence of the resistivity is established. It is independent of the external magnetic fields up to 9 T. These phenomena are explained in terms of the Kondo effect arising from the coexistence of the Mn substitutionals and interstitials in the GaMnAs lattice.
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