Anomalous Hall Effect and Magnetoresistance of (Fexsn1−x)1−y(sio2)yfilms

Jianfeng Wang,Wenqin Zou,Zhihai Lu,Zhonglin Lu,Xingchong Liu,Jianping Xu,Yingbin Lin,Liya Lv,Fengming Zhang,Youwei Du
DOI: https://doi.org/10.1088/0022-3727/40/8/002
2007-01-01
Abstract:Structural, magnetic and transport properties were investigated for heterogeneous (FexSn1-x)(1-y)( SiO2)(y) films deposited on oxidized silicon substrates at room temperature with RF magnetron sputtering. X-ray diffraction indicated that the films consist of a nanocrystalline phase of FeSn2 embedded into an amorphous background. For (FexSn1-x) (92.33)(SiO2)(7.67), it was demonstrated that with the increase in the Fe component an evolution from negative isotropic magnetoresistance (MR) behaviour to one with a mixture of anisotropic magnetoresistance and isotropic negative MR occurs. On fixing the SiO2 percentage and decreasing the Fe-Sn ratio, the negative transverse MR first increases and then decreases. For samples having a fixed Fe-Sn ratio, the negative transverse MR increases with the increase in SiO2. Compared with the Fe-Sn system, the addition of 7.67 at.% SiO2 enhances the saturated Hall resistivity. Further increase in SiO2 introduces a complicated saturated Hall resistivity dependence on the concentration of SiO2.
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