Abstract:Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

Semiconducting Ge–Si–Fe Alloy Grown on Si(100) Substrate by Reactive Deposition Epitaxy

Formation of new semiconducting Ge-Si-Fe alloy on Si(100) and its optical properties

Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation

Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides

In-situ formation of SiGe alloy by electron beam evaporation and the effect of post deposition annealing on the energy band gap

Solid Phase Epitaxy of Beta-Fesi2 on Si(100)

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

The Coherent Heteroepitaxy Of High-Index Bi2se3 Thin Film On Nanofaceted Si(211) Substrate

/spl beta/-FeSi/sub 2/ formation on MOCVD Fe/Si(100) by solid phase epitaxy

Epitaxy of Fe3O4 on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer

Asymmetric Interfaces in Epitaxial Off-Stoichiometric Fe3+ xSi1- x/Ge/Fe3+ xSi1- x Hybrid Structures: Effect on Magnetic and Electric Transport Properties

Studies on the Heterostructure of Fe Film on Si Substrate

Structure and Orientation Analysis of Iron Silicide Epitaxially Grown on Si Substrates

Epitaxial Growth of a Full-Heusler Alloy Co$_{2}$FeSi on Silicon by Low-Temperature Molecular Beam Epitaxy

Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing

Ge Deposited at Different Substrate Temperatures and Its Impact on SiC Films Growth

Growth and Physical Properties of BiFeO3 Thin Films Directly on Si Substrate

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

Al–Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusler alloys

Phase transformation from FeSe to Fe3Se4