Abstract:The IV–IV binary alloy, Si–Ge, has attracted incredible attention for its superior performances in multiple disciplines, especially in high temperature thermoelectric and BICMOS applications in the semiconductor industry. Although the alloy perceptibly exhibits a complete miscible system that can realize Si–Ge crystals with any Ge contents, the wide gap between the solidus and liquidus line inhibits the formation of Si–Ge bulk crystal with uniform Ge content. Several synthesis procedures were adapted to counteract the single crystal Si–Ge with a homogeneous composition. Although polycrystalline Si–Ge finds wide application in thermoelectric applications, single crystal silicon–germanium has proved to be the most economic, unconditional transceiver chipset resolution to uplift the future soaring bandwidth requisite for wireless backhaul information transmission. In addition, the superior electronic mobility in Si–Ge in contrast to Si has established its place in telecommunication, computer technologies, consumer electronics, space, and aerospace applications. Herein, we comprehensively summarize the development in the synthesis of bulk and thin film single crystal Si–Ge with uniform composition to be used in thermoelectric applications, especially in space applications and as heterojunction bipolar transistors to form a Si–Ge heterojunction bipolar transistor (HBT) BiCMOS technology. Thus, this expertise is expanding into diverse end-markets owing to telecom, automobile, solar, and thermoelectric capabilities. The perspective for improving the performance of the binary IV–IV alloy is also provided as a model for future development and applications in the thermoelectric and semiconductor industry.

In-situ formation of SiGe alloy by electron beam evaporation and the effect of post deposition annealing on the energy band gap

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Semiconducting Ge–Si–Fe Alloy Grown on Si(100) Substrate by Reactive Deposition Epitaxy

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Isochronal and Isothermal Annealing Effects on Si1-xGex Thin Film by Ion Beam Sputtering

Characterization of Excimer Laser Annealed Polycrystalline Si1−xGex Alloy Thin Films by X-Ray Diffraction and Spectroscopic Ellipsometry

Synthesis of Group-IV ternary and binary semiconductors using epitaxy of $\rm GeH_3Cl$ and $\rm SnH_4$

Formation of Direct Energy Gap Group IV Semiconductor Alloys and Quantum Dot Arrays in Sn x Si 1−x /Si and Sn x Ge 1−x /Ge Alloy Systems

A review on single crystal and thin film Si–Ge alloy: growth and applications

Unfolding Band and Absorption Energy Shift of \(\text{Si-Ge}\) Nano Crystals from First-principles Calculations

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

The Recrystallization Properties of Poly-Ge x Si 1-x ON SiO 2 /Si

The Recrystallization Properties of Poly-Ge<sub>x</sub>Si<sub>1-x</sub>ON SiO<sub>2</sub>/Si

Study on the Crystallization Behavior of Ge2Sb2Te5 and Silicon Doped Ge2Sb2Te5 Films

Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy

Pseudomorphic Sic Alloys Formed by Ge Ion Implantation

Growth of silicon based germanium tin alloys

Formation of new semiconducting Ge-Si-Fe alloy on Si(100) and its optical properties

Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate