Synthesis of Group-IV ternary and binary semiconductors using epitaxy of $\rm GeH_3Cl$ and $\rm SnH_4$

Aixin Zhang,Dhruve A. Ringuala,Matthew A. Mircovich,Manuel A. Roldan,John Kouvetakis,José Menéndez

2024-08-29

Abstract:$\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$ alloys were grown on Ge buffer layers at ultra-low temperature using reactions of $\rm SnH_{4}$ and $\rm GeH_{3}Cl$ for the first time. The latter is a newly introduced CVD source designed for epitaxial development of group IV semiconductors under low thermal budgets and CMOS compatible conditions. The $\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$ films were produced between 160-200oC with 3-5% Si and ~ 5-11 % Sn, which traverses the indirect to direct gap transition in Ge-Sn materials. The films were fully strained to Ge and exhibited defect-free microstructures, flat surfaces, homogeneous compositions, uniform thicknesses and sharp interfaces as required for device manufacturing. A comparative study was then conducted to investigate the applicability of $\rm GeH_{3}Cl$ for the synthesis of $\rm Ge_{1-y}Sn_{y}$ binaries under similar experimental conditions. The$\rm Ge_{1-y}Sn_{y}$ films were grown fully strained to Ge, but with reduced Sn compositions ranging from ~ 2 - 7 % and lower thicknesses relative to $\rm{Ge}_{1-x-y}Si_{x}Sn_{y}$. This prompted efforts to further investigate the growth behavior of $\rm Ge_{1-y}Sn_{y}$ using the $\rm GeH_{3}Cl$ method, bypassing the Ge buffer to produce samples directly on Si, with the aim of exploring how to manage interface strain. In this case the $\rm Ge_{1-y}Sn_{y}$ on Si films exhibited compositions and thicknesses comparable to $\rm Ge_{1-y}Sn_{y}$-on-Ge films; however, their strain states were mostly relaxed, presumably due to the large misfit between $\rm Ge_{1-y}Sn_{y}$ and Si. Efforts to increase the concentration and thickness of these samples resulted in non-homogeneous multi-phase materials containing large amounts of interstitial Sn impurities.

Materials Science

What problem does this paper attempt to address?

The paper primarily aims to address the following issues:

1. **Development of a new precursor**: The research team developed a new chemical vapor deposition (CVD) precursor—GeH₃Cl, for synthesizing group IV semiconductor materials (such as Ge₁₋ₓ₋ᵧSiₓSnᵧ alloys) under ultra-low temperature conditions. GeH₃Cl has higher reactivity compared to traditional Ge₄H₁₀, and is easier to handle and produce, making it suitable for large-scale industrial applications.

2. **Ultra-low temperature synthesis of high-quality thin films**: By reacting GeH₃Cl with SnH₄ and Si₄H₁₀, Ge₁₋ₓ₋ᵧSiₓSnᵧ alloy thin films were synthesized on a germanium buffer layer, demonstrating their growth capability at temperatures as low as 160-200°C. These thin films exhibit defect-free microstructures, flat surfaces, uniform thickness, and sharp interfaces, meeting the requirements for device fabrication.

3. **Exploring the impact of silicon incorporation on growth performance**: The study shows that incorporating a small amount of silicon atoms into Ge₁₋ₓ₋ᵧSiₓSnᵧ alloys can compensate for the lattice mismatch between germanium and tin, reduce bond strain, improve structural stability, promote higher tin incorporation, and increase the critical thickness. This indicates that the introduction of silicon helps improve crystal growth and the structural and morphological characteristics of the material.

4. **Comparison of growth behavior of Ge₁₋ySnᵧ binary alloys**: The paper also explores the possibility of synthesizing Ge₁₋ySnᵧ binary alloys using the GeH₃Cl method under similar experimental conditions and attempts to grow these thin films directly on silicon substrates to manage interface strain. The results show that while Ge₁₋ySnᵧ thin films can be grown on silicon substrates, their strain state is mostly released, and attempts to increase the sample concentration and thickness lead to the formation of heterogeneous multiphase materials.

In summary, this paper aims to demonstrate how to use the new precursor GeH₃Cl to prepare high-quality group IV semiconductor thin films at ultra-low temperatures, and provides an in-depth analysis of the impact of silicon on alloy growth performance and its potential advantages.