Abstract:GeSn is an important Si based semiconductor material. In 2015 it has been reported that a Si-based optical pumping lasing achieved from a direct-band-gap GeSn alloy. The introduce of Sn into GeSn alloy also induce a high-efficiency optical detection in the full-band communication at low concentration of Sn (approximately 3%). Moreover, GeSn alloy has higher carrier mobility than Ge. It has attracted lots of attention in recent years. However, due to the low solid solubility of Sn in Ge, easy segregation of Sn and large lattice mismatch, the growth of GeSn on Si is still a challenge. Some research groups recently realized high-quality GeSn alloy film by molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), but the dislocation density is still high than 107cm-2. Here we report a new way to grow the defect-free GeSn alloy strips on Si substrates with the assistance of Sn. We realize the lateral growth of GeSn alloy strips on Si(111) by Sn self-catalyzed method. The GeSn materials are grown in a custom-designed MBE system with a base pressure of 5 × 10−8 Pa. The growth mechanism and the impact factors on the materials are studied. It is found that different depositions and annealing times of Sn are performed to observe the impact on morphology of the materials. Sn has an important impact on morphology of the GeSn materials. It is indicated that enough depositions and annealing times of Sn to match to the deposition of Ge will contribute to the growth of GeSn alloy strip. GeSn alloy strips show a good quality by the TEM micrographs and the SAED patterns. No dislocation is found in the grown material. The controlled growth of GeSn strips are also studied on pattered substrate. The results in this study will help us obtain the better GeSn materials for device applications. Figure 1

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