Abstract:In this review article, we address key material parameters as well as the fabrication and application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an indirect to a fundamental direct bandgap material will be discussed. The main emphasis, however, is put on the Si–Ge–Sn epitaxy. The low solid solubility of α-Sn in Ge and Si of below 1 at.% along with the large lattice mismatch between α-Sn (6.489 Å) and Ge (5.646 Å) or Si (5.431 Å) of about 15% and 20%, respectively, requires non-equilibrium growth processes. The most commonly used approaches, i.e. molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydrides and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3. Special attention is devoted to the growth temperature window and growth rates being the most important growth parameters concerning the substitutional incorporation of Sn atoms into the Ge diamond lattice. Furthermore, the mainly CVD-driven epitaxy of high quality SiGeSn ternary alloys, allowing the decoupling of band engineering and lattice constant, is presented. Since achieving fundamental direct bandgap Sn-based materials strongly depends on the applied strain within the epilayers, ways to control and modify the strain are shown, especially the plastic strain relaxation of (Si)GeSn layers grown on Ge.Based on recently achieved improvements of the crystalline quality, novel low power and high mobility GeSn electronic and photonic devices have been developed and are reviewed in this paper. The use of GeSn as optically active gain or channel material with its lower and potentially direct bandgap compared to fundamentally indirect Ge (0.66 eV) and Si (1.12 eV) provides a viable solution to overcome the obstacles in both fields photonics and electronics. Moreover, the epitaxial growth of Sn-based semiconductors using CMOS compatible substrates on the road toward a monolithically integrated and efficient group IV light emitter is presented.

Polycrystalline GeSn films grown by HWCVD on SiO2/Si(001) substrates

Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition

Growth of Single-Crystalline GeSn Films with High-Sn Content on InP Substrates by Sputtering and Rapid Thermal Annealing

Deposition of GeSn film on Si substrate by plasma-enhanced chemical vapor deposition using GeCl4 and SnCl4 in H2 for developing short-wave infrared Si photonics

UHV-CVD Growth of High Quality GeSn Using SnCl4: from Material Growth Development to Prototype Devices

Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method

Synthesis of Group-IV ternary and binary semiconductors using epitaxy of $\rm GeH_3Cl$ and $\rm SnH_4$

Epitaxial Growth Of Ge1-Xsnx Films With X Up To 0.14 Grown On Ge (00l) At Low Temperature

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Growth of single crystalline GeSn alloy epilayer on Gd 2 O 3 /Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy

Nanoscale Growth of a Sn-guided SiGeSn Alloy on Si (111) Substrates by Molecular Beam Epitaxy

Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1???xSn x /Ge semiconductor probed by x-ray absorption and diffraction methods

Optoelectronic Properties for the Compressively Strained Ge1−xSnx Films Grown on Ge(004)

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Influence of in-situ hydrogenation on photoelectrical properties of amorphous and nanocrystalline GeSn deposited by magnetron sputtering

Metal-Induced Grown Poly-SiGe by SiGe Heteroepitaxy on Ni Disilicide

Highly Strained Ge1-xSnx Alloy Films with High Sn Compositions Grown by MBE

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Si–Ge–Sn alloys: From growth to applications