Abstract:GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic applications. This research presents a novel method to incorporate Sn content as high as 18% into GeSn layers grown at 285–320 °C by using SnCl4 and GeH4 precursors. A series of characterizations were performed to study the material quality, strain, surface roughness, and optical properties of GeSn layers. The Sn content could be calculated using lattice mismatch parameters provided by X-ray analysis. The strain in GeSn layers was modulated from fully strained to partially strained by etching Ge buffer into Ge/GeSn heterostructures . In this study, two categories of samples were prepared when the Ge buffer was either laterally etched onto Si wafers, or vertically etched Ge/GeSnOI wafers which bonded to the oxide. In the latter case, the Ge buffer was initially etched step-by-step for the strain relaxation study. Meanwhile, the Ge/GeSn heterostructure in the first group of samples was patterned into the form of micro-disks. The Ge buffer was selectively etched by using a CF4/O2 gas mixture using a plasma etch tool. Fully or partially relaxed GeSn micro-disks showed photoluminescence (PL) at room temperature. PL results showed that red-shift was clearly observed from the GeSn micro-disk structure, indicating that the compressive strain in the as-grown GeSn material was partially released. Our results pave the path for the growth of high quality GeSn layers with high Sn content, in addition to methods for modulating the strain for lasing and detection of short-wavelength infrared at room temperature.

Influence of in-situ hydrogenation on photoelectrical properties of amorphous and nanocrystalline GeSn deposited by magnetron sputtering

Role of Hydrogen Surface Coverage During Anodic Plasma Deposition of Hydrogenated Nanocrystalline Germanium

Effect of In-Situ Annealing on the Structural and Optical Properties of GeSn Films Grown by MBE

Comparative Study of the Structural Properties of Nanocrystalline Ge:H Plasma Deposited Onto the Cathode and the Anode Using High Hydrogen Dilutions

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

Influence of the thickness of Si and Ge films deposited on Si$_3$N$_4$/SiO$_2$/Si substrates on their structure and diffusion of hydrogen atoms from Si$_3$N$_4$ layers

Structure and photoelectric properties of hydrogenated amorphous silicon-germanium alloys produced by high hydrogen dilution method

Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers

On the Structural and Optical Properties of Sputtered Hydrogenated Amorphous Silicon Thin Films

Structural and Photoelectronic Properties of A-Sige:H Thin Films with Varied Ge Prepared by PECVD

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

MBE Growth of Ultra-Thin GeSn Film with High Sn Content and Its Infrared/terahertz Properties

Polycrystalline GeSn films grown by HWCVD on SiO2/Si(001) substrates

Growth of Single-Crystalline GeSn Films with High-Sn Content on InP Substrates by Sputtering and Rapid Thermal Annealing

Effects of Annealing on the Behavior of Sn in GeSn Alloy and GeSn-Based Photodetectors

Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

Sige : H Thin Films Prepared By Plasma Assisted Reactive Thermal Chemical Vapor Deposition

Study on the Preparation and Properties of Hydrogenated Amorphous Germanium Silicon Deposited in Argon Environment

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Structural, Eelectronic and Optical Properties of Ultra-thin Hydrogenated Amorphous Germanium Films

Interfacial electronic states of GeC/g−C3N4 van der Waal heterostructure with promising photocatalytic activity via hydrogenation