Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

C. Frigeri,M. Serenyi,A. Csik,Z. Erdelyi,D. L. Beke,L. Nasi
DOI: https://doi.org/10.48550/arXiv.0902.1814
2009-02-11
Abstract:A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for the less severe conditions here applied (150 oC, time<22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface degradation in the shape of bumps and craters. They are argued to be due to the formation of H bubbles upon heating. Hydrogen should be mostly released from the amorphous Ge layers.
Materials Science
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