Abstract:We examine different types of order measured in hydrogenated amorphous silicon (a-Si:H) and their effect on the optical absorption (band gap). We first review previous experimental work determining order on a short-range scale as probed by Raman spectroscopy, and provide, using molecular dynamics simulations, a theoretical explanation for why the band gap increases when this type of ordering is improved. We then present results on a-Si:H films deposited by hot wire chemical vapor deposition (CVD) and plasma enhanced CVD where the short-range order, from Raman spectroscopy, does not change, but order on a larger or medium-range scale does. This order is determined by measuring the width of the first x-ray diffraction peak, and was varied by depositing films at different substrate temperatures and∕or different hydrogen dilutions. We find that the film band gap also increases when this type of ordering improves, and we provide a possible mechanism to explain these trends. We also suggest that much of the previous literature showing an increase in band gap with increasing film hydrogen content should be treated with caution, as these works may not have accurately deconvoluted the effects of optical adsorption due to film hydrogenation from those due to both types of lattice ordering. Finally, we argue that this same trend may apply, to a limited extent, to microcrystalline silicon.

Structural ordering in amorphous silicon thin film due to post hydrogen plasma annealing

<title>Structural ordering in amorphous silicon thin film due to post hydrogen plasma annealing</title>

Structure and Electronic States in A-Si:H Thin Films

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Gisaxs And Atr-Ftir Studies On Stress-Induced Microstructure Evolution Of A-Si:H Under H-2 Plasma Exposure

Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

Effect of Hydrogen Radical Exposure on the Interfacial and Bulk Structure of A-Si:H/a-sinx:h Multilayer Films

High temperature annealing of hydrogenated amorphous silicon carbide thin films

A Fast Method to Diagnose Phase Transition from Amorphous to Microcrystalline Silicon

Structural properties of hydrogenated amorphous silicon carbide alloys

Structural Order Effect in Visible Photoluminescence Properties of Nanocrystalline Si : H Thin Films

Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

On the Influence of Short and Medium Range Order on the Material Band Gap in Hydrogenated Amorphous Silicon

Influence of Ultrathin Amorphous Silicon Layers on the Nucleation of Microcrystalline Silicon Films under Hydrogen Plasma Treatment

Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation

Raman study of structural order of a-SiNx:H and its change upon thermal annealing