Abstract:Hydrogenated amorphous Si thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed at various temperatures to obtain nanocrystalline Si. The microstructures and carrier transport behaviors were evaluated during the transition process from amorphous to nanocrystalline structures. Raman scattering spectroscopy and Fourier-transform infrared spectroscopy were used to characterize the changes in microstructures and bonding configurations. It is found that hydrogen is completely effused from the film at the annealing temperature of 600 degrees C, while crystallization occurs at around 700 degrees C. The carrier transport characteristics in nanocrystallized films are different from those in the amorphous Si films. The carrier transport in the amorphous silicon films is strongly influenced by the defect states resulting from the effusion of hydrogen. The dual activation energies are found in temperature-dependent conductivity results which can be attributed to the two different conduction paths in the samples. In the case of the nanocrystallized Si films obtained by high temperature annealing, the transport process is accounted for in the framework of a three-phase model comprised of amorphous and nanocrystalline phases and the grain boundary in the films.

A Fast Method to Diagnose Phase Transition from Amorphous to Microcrystalline Silicon

Study on Transition Materials from Amorphous to Microcrystalline Silicon and Solar Cells

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Analysis of Controlled Mixed-Phase (amorphous+microcrystalline) Silicon Thin Films by Real Time Spectroscopic Ellipsometry

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Evolution of Infrared Spectra and Optical Emission Spectra in Hydrogenated Silicon Thin Films Prepared by VHF-PECVD

The Microstructure Evolution of Intrinsic Microcrystalline Silicon Films and Its Influence on the Photovoltaic Performance of Thin-Film Silicon Solar Cells

An Optical Emission Spectroscopy Study on the High Rate Growth of Microcrystalline Silicon Films

Growth mechanism of microcrystalline and polymorphous silicon film with pure silane source gas

Stability of Mixed Phase Silicon Thin Film Material under Light Soaking

A Study of Raman and Optical Emission Spectroscopy on Microcrystalline Silicon Films Deposited by VHF-PECVD

Modulation Effect Of Plasma Power On Crystalline Volume Fraction Of Silicon Films In The Phase Transition From A-Si : H To Mu C-Si : H

Hydrogenated Microcrystalline Silicon Films Prepared by VHF-PECVD and Single Junction Solar Cell

Study of microstructure and defects in hydrogenated microcrystalline silicon films

Analysis on Steady Plasma Process of High-Rate Microcrystalline Silicon by Optical Emission Spectroscopy

Rapid And Controllable A-Si:H-To-Nc-Si:H Transition Induced By A High-Density Plasma Route

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

Study of XRD on Microcrystalline Silicon Thin Films Prepared by RF-PECVD

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD